SPW32N50C3 Infineon Technologies, SPW32N50C3 Datasheet - Page 4

• Manufacturer Part Number: SPW32N50C3
• Description: MOSFET N-CH 560V 32A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW32N50C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 3.9V @ 1.8mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 284W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 10 V
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 32 A
• Power Dissipation: 284000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 32A
• Drain Source Voltage Vds: 560V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014625; SPW32N50C3; SPW32N50C3IN; SPW32N50C3X; SPW32N50C3XK

Please note the new package dimensions arccording to PCN 2009-134-A
Electrical Characteristics, at T
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Typical Transient Thermal Characteristics
Symbol
Thermal resistance
R
R
R
R
R
R
Rev. 2.5
th1
th2
th3
th4
th5
th6
P
tot
(t)
0.004367
0.008742
Value
0.017
0.081
0.103
0.049
typ.
T
j
C
th1
R
th1
j
= 25 °C, unless otherwise specified
Symbol
I
I
V
t
Q
I
di
S
SM
rr
rrm
SD
rr
rr
C
/dt
th2
Unit
K/W
Page 4
T
V
V
di
C
GS
R
F
C
=25°C
=380V, I
/dt=100A/µs
R
Symbol
Thermal capacitance
C
C
C
C
C
C
th,n
Conditions
=0V, I
th,n
th1
th2
th3
th4
th5
th6
F
F
T
=I
T
=I
case
am b
S
S
,
E xternal H eatsink
min.
0.0006644
0.002479
0.009048
0.00336
-
-
-
-
-
-
-
0.114
Value
0.017
typ.
Values
1000
typ.
500
15
60
1
-
-
SPW32N50C3
max.
2008-02-11
1.2
32
96
-
-
-
-
Unit
Ws/K
Unit
A
V
ns
µC
A
A/µs