IPW90R120C3 Infineon Technologies, IPW90R120C3 Datasheet

MOSFET N-CH 900V 36A TO-247

IPW90R120C3

Manufacturer Part Number
IPW90R120C3
Description
MOSFET N-CH 900V 36A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPW90R120C3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
3.5V @ 2.9mA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 100V
Power - Max
417W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
36A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
120mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.12 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
36 A
Power Dissipation
417 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPW90R120C3XK
Q4173182
SP000413750

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPW90R120C3
Manufacturer:
INFINEON
Quantity:
3 000
Part Number:
IPW90R120C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPW90R120C3
0
Company:
Part Number:
IPW90R120C3
Quantity:
720
Rev. 1.0
Features
• Lowest figure-of-merit R
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Worldwide best R
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
CoolMOS
Type
IPW90R120C3
Power Transistor
DS,on
2)
Package
PG-TO247
J
in TO247
=25 °C, unless otherwise specified
ON
x Q
AR
AR
1)
g
2),3)
2),3)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
Marking
9R120C
J
AS
AR
GS
tot
, T
stg
T
T
T
I
I
V
static
AC (f>1 Hz)
T
M3 and M3.5 screws
D
D
page 1
C
C
C
C
DS
=8.8 A, V
=8.8 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...400 V
DD
DD
Product Summary
V
R
Q
=50 V
=50 V
DS
DS(on),max
g,typ
@ T
J
=25°C
@ T
J
=25°C
-55 ... 150
Value
1940
8.8
±20
±30
417
2.9
36
23
96
50
60
PG-TO247
IPW90R120C3
0.12
900
270
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
V
nC
2008-07-30

Related parts for IPW90R120C3

IPW90R120C3 Summary of contents

Page 1

... D,pulse =8 = 2 2), =0...400 static GS AC (f>1 Hz =25 °C tot stg M3 and M3.5 screws page 1 IPW90R120C3 @ T =25°C 900 =25°C 0.12 DS(on),max J 270 g,typ PG-TO247 Value 1940 2.9 8.8 50 ±20 ±30 417 -55 ... 150 Unit V/ °C Ncm 2008-07-30 ...

Page 2

... I =2.9 mA GS(th =900 DSS T =25 ° =900 =150 ° = GSS = = DS(on) T =25 ° = = =150 ° MHz, open drain G page 2 IPW90R120C3 Value Unit V/ns Values Unit min. typ. max 0.3 K 260 °C 900 - - V 2 µ 100 nA - 0.10 0. 0.9 - 2008-07-30 ...

Page 3

... =400 plateau = =25 ° =400 /dt =100 A/µ rrm =400V, V < <T , identical low side and high side switch peak (BR)DSS J J,max oss oss page 3 IPW90R120C3 Values min. typ. max. - 6800 - - 330 - - 200 - - 790 - - 400 - - 115 - = 270 tbd - 4 0.8 1.2 - 920 - , ...

Page 4

... Rev. 1.0 2 Safe operating area I =f parameter 100 125 150 [° Typ. output characteristics I =f parameter: V 100 [s] p page 4 IPW90R120C3 ); T =25 ° limited by on-state 10 µs resistance 100 µ 100 V [ =25 ° µs 1000 25 2008-07-30 ...

Page 5

... T Rev. 1.0 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 5 0.75 4 Typ. transfer characteristics I =f parameter: T 150 100 98 % typ 100 140 180 0 [°C] j page 5 IPW90R120C3 ); T =150 ° 4 [A] D =20V °C 150 ° [ 2008-07-30 ...

Page 6

... Forward characteristics of reverse diode I =f parameter 400 V 720 200 300 0 [nC] 12 Drain-source breakdown voltage V =f(T BR(DSS) 1050 1000 950 900 850 800 100 125 150 -60 [°C] J page 6 IPW90R120C3 J 25 °C, 98% 150 °C, 98% 150 °C 25 ° =0. - 100 140 T [°C] J 1.5 180 2008-07-30 ...

Page 7

... Typ. capacitances C =f MHz Ciss 3 10 Coss Crss 100 200 V Rev. 1.0 14 Typ f(V oss 300 400 500 600 0 [V] DS page 7 IPW90R120C3 stored energy oss ) 100 200 300 400 500 V [V] DS 600 2008-07-30 ...

Page 8

... Definition of diode switching characteristics Rev. 1.0 page 8 IPW90R120C3 2008-07-30 ...

Page 9

... PG-TO247 Outlines Dimensions in mm/inches Rev. 1.0 page 9 IPW90R120C3 2008-07-30 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 10 IPW90R120C3 2008-07-30 ...

Related keywords