IPW90R120C3 Infineon Technologies, IPW90R120C3 Datasheet

MOSFET N-CH 900V 36A TO-247

IPW90R120C3

Manufacturer Part Number
IPW90R120C3
Description
MOSFET N-CH 900V 36A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPW90R120C3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
3.5V @ 2.9mA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 100V
Power - Max
417W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
36A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
120mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.12 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
36 A
Power Dissipation
417 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPW90R120C3XK
Q4173182
SP000413750

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPW90R120C3
Manufacturer:
INFINEON
Quantity:
3 000
Part Number:
IPW90R120C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPW90R120C3
0
Company:
Part Number:
IPW90R120C3
Quantity:
720
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 1.0
CoolMOS
Features
• Lowest figure-of-merit R
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Worldwide best R
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
Type
IPW90R120C3
Power Transistor
DS,on
2)
Package
PG-TO247
J
in TO247
=25 °C, unless otherwise specified
ON
x Q
AR
AR
1)
g
2),3)
2),3)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
Marking
9R120C
D
D,pulse
AR
AS
AR
GS
tot
J
, T
stg
T
T
T
I
I
V
static
AC (f>1 Hz)
T
M3 and M3.5 screws
D
D
page 1
C
C
C
C
DS
=8.8 A, V
=8.8 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...400 V
DD
DD
Product Summary
V
R
Q
=50 V
=50 V
DS
DS(on),max
g,typ
@ T
J
=25°C
@ T
J
=25°C
-55 ... 150
Value
1940
417
8.8
±20
±30
2.9
36
23
96
50
60
PG-TO247
IPW90R120C3
0.12
900
270
Unit
A
A
V/ns
W
°C
Ncm
mJ
V
V
nC
2008-07-30

Related parts for IPW90R120C3

IPW90R120C3 Summary of contents

Page 1

... =100 ° =25 °C D,pulse =8 = 2 2), =0...400 static GS AC (f>1 Hz =25 °C tot stg M3 and M3.5 screws page 1 IPW90R120C3 =25°C 900 =25°C 0.12 J 270 nC PG-TO247 Value Unit 1940 mJ 2.9 8 V/ns ±20 V ±30 417 W -55 ... 150 °C 60 Ncm 2008-07-30 ...

Page 2

... I =2.9 mA GS(th =900 DSS T =25 ° =900 =150 ° = GSS = = DS(on) T =25 ° = = =150 ° MHz, open drain G page 2 IPW90R120C3 Value Unit V/ns Values Unit min. typ. max 0.3 K 260 °C 900 - - V 2 µ 100 nA - 0.10 0. 0.9 - 2008-07-30 ...

Page 3

... /dt =100 A/µ rrm AV < <T , identical low side and high side switch peak (BR)DSS J J,max while V is rising from 0 to 50% V oss DS while V is rising from 0 to 50% V oss DS page 3 IPW90R120C3 Values Unit typ. max. - 6800 - pF - 330 - - 200 - - 790 - - 400 ...

Page 4

... Please note the new package dimensions arccording to PCN 2009-134-A 2 Safe operating area I =f parameter limited by on-state resistance 100 125 150 1 [°C] 4 Typ. output characteristics I =f parameter: V 100 [s] p page 4 IPW90R120C3 =25 ° µs 10 µs 100 µ 100 1000 V [V] DS =25 ° 5 4 [V] DS 2008-07-30 ...

Page 5

... Please note the new package dimensions arccording to PCN 2009-134-A 6 Typ. drain-source on-state resistance R =f DS(on) D parameter 5 0.75 4 [V] 8 Typ. transfer characteristics I =f parameter: T 150 100 98 % typ 100 140 180 0 [°C] page 5 IPW90R120C3 =150 ° 4 [A] D =20V J 25 °C 150 ° [V] GS 2008-07-30 ...

Page 6

... Forward characteristics of reverse diode I =f parameter 400 V 720 200 300 0 [nC] 12 Drain-source breakdown voltage V =f BR(DSS) J 1050 1000 950 900 850 800 100 125 150 -60 [°C] page 6 IPW90R120C3 25 °C, 98% 150 °C, 98% 150 °C 25 °C 0.5 1 1.5 V [V] SD =0. - 100 140 180 T [°C] J 2008-07-30 ...

Page 7

... C =f MHz Ciss 3 10 Coss Crss 100 200 V DS Rev. 1.0 Please note the new package dimensions arccording to PCN 2009-134-A 14 Typ. C oss E = f(V ) oss 300 400 500 600 0 [V] page 7 IPW90R120C3 stored energy 100 200 300 400 500 600 V [V] DS 2008-07-30 ...

Page 8

... Definition of diode switching characteristics Rev. 1.0 Please note the new package dimensions arccording to PCN 2009-134-A page 8 IPW90R120C3 2008-07-30 ...

Page 9

... PG-TO247 Outlines Dimensions in mm/inches Rev. 1.0 Please note the new package dimensions arccording to PCN 2009-134-A page 9 IPW90R120C3 2008-07-30 ...

Page 10

... If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 Please note the new package dimensions arccording to PCN 2009-134-A page 10 IPW90R120C3 2008-07-30 ...

Page 11

New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Data ...

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