IPW90R120C3 Infineon Technologies, IPW90R120C3 Datasheet - Page 5

MOSFET N-CH 900V 36A TO-247

IPW90R120C3

Manufacturer Part Number
IPW90R120C3
Description
MOSFET N-CH 900V 36A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPW90R120C3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
3.5V @ 2.9mA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 100V
Power - Max
417W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
36A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
120mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.12 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
36 A
Power Dissipation
417 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPW90R120C3XK
Q4173182
SP000413750

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPW90R120C3
Manufacturer:
INFINEON
Quantity:
3 000
Part Number:
IPW90R120C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPW90R120C3
0
Company:
Part Number:
IPW90R120C3
Quantity:
720
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Drain-source on-state resistance
R
D
DS(on)
=f(V
0.35
0.25
0.15
0.05
0.3
0.2
0.1
60
40
20
DS
0
=f(T
0
-60
0
); T
j
); I
J
=150 °C
GS
D
-20
=26 A; V
5
20
GS
10
V
=10 V
T
DS
j
4 V
60
[°C]
4.5 V
[V]
98 %
15
5.5 V
100
typ
6 V
20
8 V
140
5 V
180
page 5
25
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. transfer characteristics
I
parameter: T
D
DS(on)
=f(V
0.75
0.25
150
100
0.5
50
GS
=f(I
0
1
0
0
); V
0
D
); T
DS
J
GS
=20V
J
=150 °C
2
4 V
20
4.5 V
4
V
I
GS
D
40
[A]
4.8 V
[V]
6
5 V
IPW90R120C3
60
8
150 °C
25 °C
10 V
2008-07-30
80
10

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