IPW90R120C3 Infineon Technologies, IPW90R120C3 Datasheet - Page 4

MOSFET N-CH 900V 36A TO-247

IPW90R120C3

Manufacturer Part Number
IPW90R120C3
Description
MOSFET N-CH 900V 36A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPW90R120C3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
3.5V @ 2.9mA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 100V
Power - Max
417W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
36A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
120mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.12 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
36 A
Power Dissipation
417 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPW90R120C3XK
Q4173182
SP000413750

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPW90R120C3
Manufacturer:
INFINEON
Quantity:
3 000
Part Number:
IPW90R120C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPW90R120C3
0
Company:
Part Number:
IPW90R120C3
Quantity:
720
Please note the new package dimensions arccording to PCN 2009-134-A
Rev. 1.0
1 Power dissipation
P
3 Max. transient thermal impedance
Z
parameter: D=t
thJC
tot
=f(T
=f(t
450
400
350
300
250
200
150
100
10
10
10
10
50
0
-1
-2
-3
0
P
C
10
0
)
)
-5
0.05
0.02
0.01
single pulse
0.1
0.2
0.5
25
p
/T
10
-4
50
T
t
C
10
p
75
[°C]
[s]
-3
100
10
-2
125
10
150
page 4
-1
2 Safe operating area
I
parameter: t
4 Typ. output characteristics
I
parameter: V
D
D
=f(V
=f(V
10
100
10
10
10
50
DS
DS
-1
0
2
1
0
0
); T
1
); T
limited by on-state
resistance
C
p
J
=25 °C
GS
=25 °C; D =0
5
10
10
V
V
DS
DS
[V]
[V]
15
100
5.5 V
IPW90R120C3
4.5 V
4 V
6 V
5 V
10 ms
8 V
100 µs
1 ms
DC
20
10 µs
20 V
1 µs
2008-07-30
1000
25

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