NDS356P Fairchild Semiconductor, NDS356P Datasheet
NDS356P
Specifications of NDS356P
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NDS356P Summary of contents
Page 1
... Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package 25°C unless otherwise noted A - Continuous (Note 1a) - Pulsed (Note 1a) (Note 1b) (Note 1a) (Note 1) March 1996 = 0 -4.5V. DS(ON DS(ON NDS356P -20 ± 12 ±1.1 ±10 0.5 0.46 -55 to 150 250 75 NDS356P Rev. E1 Units °C °C/W °C/W ...
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... Gate-Drain Charge gd Conditions -250 µ - =125° - -250 µ =125° -4 -1 =125° - - 1.0 MHz GEN Min Typ Max Units - µA -20 µA 100 nA -100 nA -0.8 -1.6 -2.5 V -0.5 -1.3 -2.2 0.3 0.4 0. 1.8 S 180 pF 255 3 1 NDS356P Rev. E1 ...
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... C/W when mounted on a 0.02 in pad of 2oz cpper 270 C/W when mounted on a 0.001 in pad of 2oz cpper Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -1 Min Typ Max -0.6 -0.85 -1.2 (Note 2) JC Units guaranteed by NDS356P Rev. E1 ...
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... Drain Current and Temperature 1.15 1 1.05 1 0.95 0.9 0.85 0 -50 Figure 6. Gate Threshold Variation = -3.5 V -4.0 -4.5 -5.0 -6.0 - DRAIN CURRENT ( 4. 125°C J 25°C -55° DRAIN CURRENT ( -250µ 100 125 T , JUNCTION TEMPERATURE (°C) J with Temperature NDS356P Rev 150 ...
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... C iss -6 C oss - rss Figure 10. Gate Charge Characteristics t d(on OUT V OUT DUT Figure 12. Switching Waveforms 25°C -55°C -0.6 -0.9 -1.2 -1.5 -1 BODY DIODE FORWARD VOLTAGE (V) SD Source Current and Temperature - GATE CHARGE (nC off t t d(off PULSE WIDTH NDS356P Rev INVERTED ...
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... V 0.1 SINGLE PULSE 0. -5V DS 0.02 0.01 -8 -10 0.1 0.2 Figure 14. Maximum Safe Operating Area 0.01 0 TIME (sec -10V GS = 25° DRAIN-SOURCE VOLTAGE ( ( 250 °C/W JA P(pk ( Duty Cycle NDS356P Rev. E1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...