NDS356P Fairchild Semiconductor, NDS356P Datasheet

MOSFET P-CH 20V 1.1A SSOT-3

NDS356P

Manufacturer Part Number
NDS356P
Description
MOSFET P-CH 20V 1.1A SSOT-3
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS356P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
210 mOhm @ 1.3A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.1A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 5V
Input Capacitance (ciss) @ Vds
180pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS356PTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDS356P
Manufacturer:
Fairchil
Quantity:
65 000
Part Number:
NDS356P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
NDS356P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
_______________________________________________________________________________
D
DSS
GSS
D
J
NDS356P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These P-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage applications such as
notebook computer power management, portable
electronics, and other battery powered circuits where
fast high-side switching, and low in-line power loss are
needed in a very small outline surface mount package.
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
Maximum Drain Current
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1b)
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1)
Features
-1.1 A, -20V. R
Proprietary package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low R
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface mount
package.
G
DS(ON)
-55 to 150
NDS356P
D
= 0.3
± 12
0.46
±1.1
±10
250
-20
0.5
75
S
@ V
GS
= -4.5V.
DS(ON)
March 1996
.
NDS356P Rev. E1
Units
°C/W
°C/W
°C
W
V
V
A

Related parts for NDS356P

NDS356P Summary of contents

Page 1

... Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package 25°C unless otherwise noted A - Continuous (Note 1a) - Pulsed (Note 1a) (Note 1b) (Note 1a) (Note 1) March 1996 = 0 -4.5V. DS(ON DS(ON NDS356P -20 ± 12 ±1.1 ±10 0.5 0.46 -55 to 150 250 75 NDS356P Rev. E1 Units °C °C/W °C/W ...

Page 2

... Gate-Drain Charge gd Conditions -250 µ - =125° - -250 µ =125° -4 -1 =125° - - 1.0 MHz GEN Min Typ Max Units - µA -20 µA 100 nA -100 nA -0.8 -1.6 -2.5 V -0.5 -1.3 -2.2 0.3 0.4 0. 1.8 S 180 pF 255 3 1 NDS356P Rev. E1 ...

Page 3

... C/W when mounted on a 0.02 in pad of 2oz cpper 270 C/W when mounted on a 0.001 in pad of 2oz cpper Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -1 Min Typ Max -0.6 -0.85 -1.2 (Note 2) JC Units guaranteed by NDS356P Rev. E1 ...

Page 4

... Drain Current and Temperature 1.15 1 1.05 1 0.95 0.9 0.85 0 -50 Figure 6. Gate Threshold Variation = -3.5 V -4.0 -4.5 -5.0 -6.0 - DRAIN CURRENT ( 4. 125°C J 25°C -55° DRAIN CURRENT ( -250µ 100 125 T , JUNCTION TEMPERATURE (°C) J with Temperature NDS356P Rev 150 ...

Page 5

... C iss -6 C oss - rss Figure 10. Gate Charge Characteristics t d(on OUT V OUT DUT Figure 12. Switching Waveforms 25°C -55°C -0.6 -0.9 -1.2 -1.5 -1 BODY DIODE FORWARD VOLTAGE (V) SD Source Current and Temperature - GATE CHARGE (nC off t t d(off PULSE WIDTH NDS356P Rev INVERTED ...

Page 6

... V 0.1 SINGLE PULSE 0. -5V DS 0.02 0.01 -8 -10 0.1 0.2 Figure 14. Maximum Safe Operating Area 0.01 0 TIME (sec -10V GS = 25° DRAIN-SOURCE VOLTAGE ( ( 250 °C/W JA P(pk ( Duty Cycle NDS356P Rev. E1 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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