NDS356P Fairchild Semiconductor, NDS356P Datasheet - Page 2

• Manufacturer Part Number: NDS356P
• Description: MOSFET P-CH 20V 1.1A SSOT-3
• Manufacturer: Fairchild Semiconductor

Specifications of NDS356P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 210 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS356PTR

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(ON)
d(on)
r
d(off)
f
FS
GS(th)
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2)
(T
(Note 2)
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
= 0 V, I
= -16 V, V
= 12 V, V
= -12 V, V
= V
= -4.5 V, I
= -10 V, I
= -4.5 V, V
= -5 V, I
= -10 V, V
= -10 V, I
= -10 V, R
= -10 V, I
= -5 V
GS
, I
D
D
D
= -250 µA
= -250 µA
D
D
DS
= -1.1 A
D
D
GS
DS
GEN
GS
= -1.3 A
= -1.1 A,
= -1.1 A
DS
= 0 V
= -1 A,
= 0 V
= 0 V
= 0 V,
= -5 V
= 50
T
T
T
J
J
J
=125°C
=125°C
=125°C
Min
-0.8
-0.5
-20
-3
Typ
-1.6
-1.3
180
255
1.8
3.5
60
17
56
41
7
Max
-100
0.21
-2.5
-2.2
100
-20
0.3
0.4
1.5
15
30
90
80
-5
5
2
NDS356P Rev. E1
Units
pF
pF
pF
µA
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
V
V
A
S