NDB6060 Fairchild Semiconductor, NDB6060 Datasheet - Page 4

• Manufacturer Part Number: NDB6060
• Description: MOSFET N-CH 60V 48A TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of NDB6060

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDB6060TR

Typical Electrical Characteristics
6 0
5 0
4 0
3 0
2 0
1 0
0
1 0 0
1.75
1.25
0.75
2
8 0
6 0
4 0
2 0
1.5
0.5
Figure 3. On-Resistance Variation
Figure 5. Transfer Characteristics
V
0
Figure 1. On-Region Characteristics
2
1
-50
DS
0
= 10V
V
with Temperature
V
GS
-25
I
GS
D
= 20V
= 24A
1
= 10V
V
4
GS
0
V
T , JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
DS
J
12
, DRAIN-SOURCE VOLTAGE (V)
2
2 5
10
T = -55°C
J
5 0
9.0
6
3
7 5
8.0
1 0 0
4
125°C
7.0
8
1 2 5
25°C
5
6.0
1 5 0
5.0
1 7 5
1 0
6
1.2
1.1
0.9
0.8
0.7
0.6
0.5
2.5
1.5
0.5
1
2
1
Figure 4. On-Resistance Variation with Drain
1.8
1.6
1.4
1.2
0.8
0.6
Figure 2. On-Resistance Variation with Gate
-50
0
2
1
0
Figure 6. Gate Threshold Variation with
V
-25
Current and Temperature
GS
Voltage and Drain Current
Temperature
= 10V
2 0
V
GS
2 0
0
T , JUNCTION TEMPERATURE (°C)
= 6.0V
J
2 5
I , DRAIN CURRENT (A)
D
I
D
4 0
, DRAIN CURRENT (A)
4 0
5 0
7.0
T = 125°C
7 5
J
6 0
6 0
8.0
NDP6060 Rev. B1 / NDB6060 Rev. C
100
25°C
-55°C
9.0
I
125
V
D
10
8 0
DS
8 0
= 250µA
= V
12
150
GS
20
1 0 0
175
1 0 0