NDB6060 Fairchild Semiconductor, NDB6060 Datasheet - Page 6

• Manufacturer Part Number: NDB6060
• Description: MOSFET N-CH 60V 48A TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of NDB6060

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDB6060TR

Typical Electrical Characteristics
Figure 13. Transconductance Variation with Drain
0.05
0.03
0.02
0.01
3 0
2 4
1 8
1 2
6
0
0.5
0.3
0.2
0.1
0
1
0.01
V
Current and Temperature
DS
0.05
0.02
0.01
0.1
=10V
0.02
0.2
1 0
D = 0.5
Single Pulse
0.05
I
D
, DRAIN CURRENT (A)
2 0
0.1
Figure 15. Transient Thermal Response Curve
3 0
0.2
T = -55°C
J
25°C
125°C
(continued)
0.5
4 0
1
5 0
2
t ,TIME (m s)
1
3 0 0
2 0 0
1 0 0
5 0
2 0
1 0
5
2
1
Figure 14. Maximum Safe Operating Area
1
5
R
SINGLE PULSE
10
JC
T
2
V
C
GS
= 1.5 C/W
= 25°C
= 10V
3
V
20
DS
o
, DRAIN-SOURCE VOLTAGE (V)
5
50
P(pk)
1 0
T - T
R
Duty Cycle, D = t /t
J
100
R
JC
t
1
C
JC
(t) = r(t) * R
2 0
t
= P * R
2
NDP6060 Rev. B1 / NDB6060 Rev. C
= 1.5 °C/W
200
3 0
JC
1
JC
(t)
2
6 0
500
1 0 0
1000