HRF3205 Fairchild Semiconductor, HRF3205 Datasheet - Page 4

• Manufacturer Part Number: HRF3205
• Description: MOSFET N-CH 55V 100A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HRF3205

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 59A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 25V
• Power - Max: 175W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 7. SOURCE TO DRAIN DIODE FORWARD VOLTAGE
FIGURE 5. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 9. MAXIMUM CONTINUOUS DRAIN CURRENT vs
1000
120
8000
7000
6000
5000
4000
3000
2000
1000
90
60
30
100
10
0
25
1
0
0.5
1
CURRENT LIMITED
BY PACKAGE
V
C
C
C
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
GS
ISS
RSS
OSS
T
J
CASE TEMPERATURE
= 0V, f = 1MHz
= 175
= C
50
= C
C
GS
V
V
GD
DS
DS
SD
o
T
C
T
+ C
J
, DRAIN TO SOURCE VOLTAGE (V)
, SOURCE TO DRAIN VOLTAGE (V)
C
+ C
= 25
, CASE TEMPERATURE (
GD
75
GS
1.0
o
C
10
100
C
C
C
ISS
RSS
OSS
125
1.5
(Continued)
o
C)
150
100
175
2.0
1000
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
1000
100
FIGURE 6. GATE CHARGE WAVEFORMS FOR CONSTANT
100
20
16
12
10
10
8
4
0
FIGURE 8. FORWARD BIAS SAFE OPERATING AREA
1
0.01
0
1
I
D
STARTING T
If R = 0
t
If R
t
AV
AV
= 59A
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
= (L)(I
= (L/R)ln[(I
0
GATE CURRENT
CAPABILITY
36
V
AS
DS
0.1
)/(1.3*RATED BV
J
t
, DRAIN TO SOURCE VOLTAGE (V)
AV
= 150
AS
Q
, TIME IN AVALANCHE (ms)
DS(ON)
*R)/(1.3*RATED BV
g
, GATE CHARGE (nC)
o
C
72
10
1
DSS
STARTING T
V
108
- V
DSS(MAX)
V
DSS
DD
DS
HRF3205, HRF3205S Rev. B
)
= 11V
- V
J
V
V
DD
10
DS
= 25
DS
= 55V
144
) +1]
= 44V
= 28V
o
C
100 s
10 s
1ms
10ms
180
100
100