FDS4435A Fairchild Semiconductor, FDS4435A Datasheet
FDS4435A
Manufacturer Part Number
FDS4435A
Description
MOSFET P-CH 30V 9A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDS4435A.pdf
(5 pages)
Specifications of FDS4435A
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 5V
Input Capacitance (ciss) @ Vds
2010pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.017Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
9A
Power Dissipation
2.5W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4435ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS4435A
Manufacturer:
FSC
Quantity:
50 000
Company:
Part Number:
FDS4435A
Manufacturer:
FSC
Quantity:
5 713
Part Number:
FDS4435A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS4435A-NL
Manufacturer:
FAIRCHILD
Quantity:
10 000
Part Number:
FDS4435A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
ã2001
P-Channel Logic Level PowerTrench MOSFET
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
Symbol
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
stg
FDS4435A
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
SO-8
D
D
S
- Continuous
- Pulsed
S
FDS4435A
Parameter
S
Device
G
T
A
= 25°C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
5
6
8
7
Tape Width
-55 to +150
12mm
Ratings
-30
-50
2.5
1.2
50
25
-9
1
20
W
W
4
2
1
3
October 2001
2500 units
Quantity
Units
C/W
C/W
W
V
V
A
C
D
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FDS4435A Summary of contents
Page 1
... R JA Thermal Resistance, Junction-to-Case R JC Package Marking and Ordering Information Device Marking FDS4435A ã2001 25°C unless otherwise noted A Parameter (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Device Reel Size FDS4435A 13’’ October 2001 Ratings Units - -50 2.5 W 1.2 1 -55 to +150 C 50 C/W 25 ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature BV DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse GSSR On Characteristics ...
Page 3
V = -10V GS -6.0V -4.5V -4.0V -3. -3.0V -2. -V , DRAIN-SOURCE VOLTAGE ( -10V -9A D 1.4 1.2 1 ...
Page 4
I = -8. - GATE CHARGE (nC) g 100 R LIMIT DS(ON) 100 s 1ms 10 10ms 100ms 1s 1 10s DC ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...