FDS4435A Fairchild Semiconductor, FDS4435A Datasheet - Page 2

• Manufacturer Part Number: FDS4435A
• Description: MOSFET P-CH 30V 9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS4435A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Input Capacitance (ciss) @ Vds: 2010pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.017Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 9A
• Power Dissipation: 2.5W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4435ATR

Electrical Characteristics
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
t
Symbol
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
rr
FS
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
GS(th)
DSS
T
T
q
DSS
J
J
q
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Source-Drain Reverse Recovery Time I
£
Parameter
(Note 2)
m
°
q
(Note 2)
£
T
2
A
= 25°C unless otherwise noted
V
I
V
V
V
V
I
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
F
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= -10 A, dl
= -250 A,Referenced to 25 C
= -250 A,Referenced to 25 C
= -24 V, V
= V
= -10 V, I
= -15 V, V
= -15 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= -10 V, I
= -4.5 V, I
= -10 V, V
= -15 V, I
= -10 V, R
= -5 V,
= 0 V, I
Test Conditions
GS
, I
D
S
D
F
/dt = 100 A/ S
= -250 A
= -2.1 A
D
D
DS
= -250 A
D
D
D
GS
DS
GS
GEN
DS
°
= -9 A
= -9 A
= -9 A
= -7 A
= -1 A
= 0 V
= 0
= -5 V
= 0 V
= 0 V
= 6
T
T
J
J
= 125 C
= 125 C
(Note 2)
2
Min
-30
-40
-1
0.015
0.021
0.023
Typ
2010
0.75
-1.7
590
260
100
-26
4.2
25
12
15
55
21
36
6
8
0.017
0.030
0.025
Max
-100
100
140
-2.1
-1.2
-10
22
27
80
30
80
-1
-2
Units
mV/ C
mV/ C
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
A
V
V
A
S
V
A
D