FDS4435A Fairchild Semiconductor, FDS4435A Datasheet - Page 2
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FDS4435A
Manufacturer Part Number
FDS4435A
Description
MOSFET P-CH 30V 9A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDS4435A.pdf
(5 pages)
Specifications of FDS4435A
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 5V
Input Capacitance (ciss) @ Vds
2010pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.017Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
9A
Power Dissipation
2.5W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4435ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS4435A
Manufacturer:
FSC
Quantity:
50 000
Company:
Part Number:
FDS4435A
Manufacturer:
FSC
Quantity:
5 713
Part Number:
FDS4435A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS4435A-NL
Manufacturer:
FAIRCHILD
Quantity:
10 000
Part Number:
FDS4435A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Electrical Characteristics
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
t
Symbol
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
rr
FS
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
GS(th)
DSS
T
T
q
DSS
J
J
q
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Source-Drain Reverse Recovery Time I
£
Parameter
(Note 2)
m
°
q
(Note 2)
£
T
2
A
= 25°C unless otherwise noted
V
I
V
V
V
V
I
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
F
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= -10 A, dl
= -250 A,Referenced to 25 C
= -250 A,Referenced to 25 C
= -24 V, V
= V
= -10 V, I
= -15 V, V
= -15 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= -10 V, I
= -4.5 V, I
= -10 V, V
= -15 V, I
= -10 V, R
= -5 V,
= 0 V, I
Test Conditions
GS
, I
D
S
D
F
/dt = 100 A/ S
= -250 A
= -2.1 A
D
D
DS
= -250 A
D
D
D
GS
DS
GS
GEN
DS
°
= -9 A
= -9 A
= -9 A
= -7 A
= -1 A
= 0 V
= 0
= -5 V
= 0 V
= 0 V
= 6
T
T
J
J
= 125 C
= 125 C
(Note 2)
2
Min
-30
-40
-1
0.015
0.021
0.023
Typ
2010
0.75
-1.7
590
260
100
-26
4.2
25
12
15
55
21
36
6
8
0.017
0.030
0.025
Max
-100
100
140
-2.1
-1.2
-10
22
27
80
30
80
-1
-2
Units
mV/ C
mV/ C
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
A
V
V
A
S
V
A
D