FDU8870 Fairchild Semiconductor, FDU8870 Datasheet - Page 101

• Manufacturer Part Number: FDU8870
• Description: MOSFET N-CH 30V 160A I-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDU8870

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 118nC @ 10V
• Input Capacitance (ciss) @ Vds: 5160pF @ 15V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.fairchildsemi.com
Small Signal Transistors – Digital Transistors (Continued)
FJN3305R
FJN3306R
FJN3307R
FJN3308R
FJN3313R
FJN3314R
FJN3315R
TO-92 PNP Configuration
FJN3311R
FJN4309R
FJN4310R
FJN4311R
FJN4312R
FJN4301R
FJN4302R
FJN4303R
FJN4304R
FJN4305R
FJN4306R
FJN4307R
FJN4308R
FJN4313R
FJN4314R
TO-92S NPN Configuration
FJNS3209R
FJNS3210R
FJNS3212R
FJNS3201R
FJNS3202R
FJNS3203R
FJNS3204R
FJNS3205R
FJNS3206R
FJNS3207R
FJNS3208R
Products
V
(V)
50
50
50
50
50
50
50
40
40
40
40
40
50
50
50
50
50
50
50
50
50
50
40
40
40
50
50
50
50
50
50
50
50
CEO
V
(V)
50
50
50
50
50
50
50
40
40
40
40
40
50
50
50
50
50
50
50
50
50
50
40
40
40
50
50
50
50
50
50
50
50
CBO
V
(V)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
EBO
5
5
5
5
5
5
5
5
Max (A)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
I
C
(KΩ)
4.7
2.2
4.7
2.2
4.7
4.7
4.7
2.2
4.7
4.7
4.7
4.7
R
10
22
47
22
10
22
47
10
22
47
10
22
47
10
47
10
22
47
10
22
47
1
(KΩ)
4.7
4.7
4.7
4.7
R
47
47
22
47
47
10
10
22
47
10
47
47
22
47
47
10
22
47
47
47
22
–
–
–
–
–
–
–
–
2
Min
100
100
100
100
100
100
100
100
30
68
68
56
68
68
33
20
30
56
68
30
68
68
56
68
68
20
30
56
68
30
68
68
56
2-96
Discrete Power Products –
Max
600
600
600
600
600
600
600
600
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
CE
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V) @I
C
10
10
10
10
5
5
5
5
5
5
1
1
1
1
1
5
5
5
5
5
5
5
5
5
1
1
1
5
5
5
5
5
5
(mA)
Bipolar Transistors and JFETs
Max (V)
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
@I
CE (sat)
C
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
(mA) @I
B
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
10
1
1
1
1
1
1
1
(mA)