FDU8870 Fairchild Semiconductor, FDU8870 Datasheet - Page 110
![MOSFET N-CH 30V 160A I-PAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
FDU8870
Manufacturer Part Number
FDU8870
Description
MOSFET N-CH 30V 160A I-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDU8876.pdf
(214 pages)
Specifications of FDU8870
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.9 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
118nC @ 10V
Input Capacitance (ciss) @ Vds
5160pF @ 15V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDU8870
Manufacturer:
FAIRCHILD
Quantity:
12 500
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www.fairchildsemi.com
Small Signal Transistors – General Purpose Transistors (Continued)
TN6727A
TN2907A
TN6728A
FPN660A
FPN660
MPSW56
TN4033A
TN6729A
TN5415A
TO-92 NPN Configuration
KSC5019
PN2369
2N5769
PN2369A
PN4275
KSD261
SS9013
BC368
FJN5471
FJN965
KSD5041
MPS6514
MPS6515
MPS6521
KSC900
2N5089
KSP6520
KSP6521
BC238
BC239
2N4124
KSD227
2N3390
2N3391A
2N3392
Products
V
CEO
200
40
60
60
60
60
80
80
80
10
15
15
15
15
20
20
20
20
20
20
25
25
25
25
25
25
25
25
25
25
25
25
25
25
(V)
V
CBO
200
50
60
60
80
80
80
80
80
30
40
40
40
40
40
40
25
40
40
40
40
40
40
30
30
40
40
30
30
30
30
25
25
25
(V)
V
EBO
5
5
5
5
5
4
5
5
4
6
4
4
4
4
5
5
5
7
7
7
4
4
4
5
4
4
4
5
5
5
5
5
5
5
(V)
Max (A)
0.05
1.5
0.8
1.2
0.1
0.2
0.2
0.2
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.2
0.3
0.5
0.5
0.5
I
–
–
–
–
3
3
1
1
1
2
2
5
5
5
C
Min
100
250
100
100
100
140
120
700
230
180
250
300
120
400
200
300
120
120
120
400
250
150
50
50
50
30
40
40
40
35
64
85
90
70
2-105
Discrete Power Products –
Max
1000
1000
1200
250
300
250
550
300
300
250
150
600
120
120
120
120
400
202
375
600
600
300
500
600
400
600
800
800
360
400
800
500
300
–
h
FE
@V
0.35
4.5
4.5
4.5
10
10
10
10
10
10
10
CE
1
1
2
2
1
5
1
1
1
1
1
1
1
1
2
2
2
3
5
5
5
1
1
(V) @I
1000
C
150
250
500
500
100
250
500
100
500
500
500
500
100
0.5
0.1
50
50
10
10
10
10
50
50
2
2
2
2
2
2
2
2
2
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.45
0.25
0.5
1.6
0.5
0.4
0.5
0.5
0.5
2.5
0.5
0.5
0.5
0.5
0.4
0.6
0.5
0.5
0.5
0.5
0.5
0.2
0.5
0.5
0.5
0.6
0.6
0.3
0.4
–
–
–
1
1
V
@I
CE (sat)
1000
2000
2000
1000
3000
3000
3000
2000
C
500
250
250
500
250
100
100
100
500
500
100
100
300
50
10
50
50
50
20
10
50
50
50
–
–
–
(mA) @I
B
100
100
100
100
100
100
100
50
10
10
50
10
50
10
10
10
50
50
30
–
–
–
5
1
5
5
5
2
1
5
5
5
5
5
(mA)
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