IRL610A Fairchild Semiconductor, IRL610A Datasheet - Page 2

• Manufacturer Part Number: IRL610A
• Description: MOSFET N-CH 200V 3.3A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of IRL610A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 1.65A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 5V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 33W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRL610A
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=4mH, I
(3) I
(4) Pulse Test: Pulse Width = 250 s, Duty Cycle
(5) Essentially Independent of Operating Temperature
R
BV
BV/ T
V
t
t
V
C
I
I
C
GS(th)
C
Q
Q
I
Q
DS(on)
d(on)
d(off)
GSS
DSS
g
Q
I
SM
t
t
S
SD
rr
t
oss
DSS
iss
rss
SD
fs
r
f
gs
gd
rr
g
J
3.3A, di/dt
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=3.3A, V
140A/ s, V
Characteristic
Characteristic
DD
=50V, R
DD
G
=27 , Starting T
BV
DSS
(T
C
, Starting T
=25 C unless otherwise specified)
(1)
(4)
2%
J
=25 C
Min.
Min.
200
1.0
J
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
=25 C
Typ.
Typ.
0.19
0.38
185
123
1.9
6.1
1.4
2.8
35
14
20
--
--
--
--
--
--
--
9
9
6
--
--
--
Max. Units
Max. Units
-100
100
100
240
2.0
1.5
3.3
1.5
12
10
45
20
30
30
50
20
--
--
--
--
--
--
--
9
V/ C
nA
nC
pF
ns
ns
V
V
A
V
A
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
G
DS
=250 A
=3.3A
F
=25 C,I
=25 C,I
/dt=100A/ s
=22
=0V,I
=5V,I
=20V
=-20V
=200V
=160V,T
=5V,I
=40V,I
=0V,V
=100V,I
=160V,V
See Fig 13
Test Condition
Test Condition
See Fig 5
D
D
D
S
F
DS
=250 A
=250 A
=1.65A
D
=3.3A
=3.3A,V
=1.65A
D
=25V,f =1MHz
C
GS
=3.3A,
=125 C
See Fig 7
=5V,
GS
=0V
(4) (5)
(4) (5)
(4)
(4)
(4)
2