IRL610A Fairchild Semiconductor, IRL610A Datasheet - Page 3

• Manufacturer Part Number: IRL610A
• Description: MOSFET N-CH 200V 3.3A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of IRL610A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 1.65A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 5V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 33W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1 0
1 0
1 0
3 0 0
2 4 0
1 8 0
1 2 0
-1
6 0
1
0
1 0
4
3
2
1
0
0
1 0
0
-1
0
Top :
Bottom : 3.0 V
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 3. On-Resistance vs. Drain Current
C
C
C
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
7.0 V
iss
oss
rss
V
GS
2
Fig 1. Output Characteristics
V
V
DS
DS
, Drain-Source Voltage [V]
I
, Drain-Source Voltage [V]
D
V
GS
, Drain Current [A]
1 0
= 5 V
0
4
@ N o t e s :
C
C
C
iss
oss
rss
V
1 . 2 5 0 s P u l s e T e s t
2 . T
GS
= C
= C
= C
= 1 0 V
C
gs
ds
gd
1 0
= 2 5
+ C
+ C
6
1
gd
gd
o
C
( C
@ N o t e : T
ds
1 0
= s h o r t e d )
1
@ N o t e s :
1 . V
2 . f = 1 M H z
8
J
GS
= 2 5
= 0 V
o
C
1 0
1 0
1 0
1 0
1 0
1 0
1 0
-1
-1
1
0
1
0
6
4
2
0
0 . 4
0
0
Fig 4. Source-Drain Diode Forward Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
2 5
1 5 0
o
1 5 0
C
o
C
Fig 2. Transfer Characteristics
o
C
0 . 6
2
V
V
SD
GS
Q
V
2 5
G
DS
- 5 5
, Source-Drain Voltage [V]
2
, Gate-Source Voltage [V]
o
, Total Gate Charge [nC]
V
C
= 1 6 0 V
DS
o
V
= 1 0 0 V
C
DS
0 . 8
4
= 4 0 V
IRL610A
@ N o t e s :
4
1 . 0
1 . V
2 . V
3 . 2 5 0 s P u l s e T e s t
6
@ N o t e s : I
@ N o t e s :
1 . V
2 . 2 5 0 s P u l s e T e s t
GS
DS
= 0 V
= 4 0 V
GS
= 0 V
D
= 3 . 3 A
1 . 2
8
6
1 . 4
1 0
3