FQP12P10 Fairchild Semiconductor, FQP12P10 Datasheet - Page 3

• Manufacturer Part Number: FQP12P10
• Description: MOSFET P-CH 100V 11.5A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP12P10

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 5.75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.29 Ohms
• Forward Transconductance Gfs (max / Min): 6.7 S
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
1600
1400
1200
1000
800
600
400
200
0.8
0.6
0.4
0.2
0.0
0
10
0
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
-1
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10
C
C
-V
C
oss
iss
rss
DS
-I
, Drain-Source Voltage [V]
D
10
, Drain Current [A]
0
V
20
GS
= - 20V
V
GS
= - 10V
C
C
C
iss
oss
rss
= C
= C
= C
10
" Note : T
30
gs
gd
ds
1
+ C
+ C
" Notes :
gd
gd
1. V
2. f = 1 MHz
(C
J
ds
= 25!
GS
= shorted)
= 0 V
40
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
175!
Variation vs. Source Current
0.5
4
25!
175!
4
-V
-V
25!
Q
SD
and Temperature
GS
G
1.0
, Source-Drain Voltage [V]
8
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
DS
-55!
V
= -80V
DS
1.5
12
V
6
= -50V
DS
= -20V
2.0
16
" Notes :
" Notes :
1. V
2. 250# s Pulse Test
1. V
2. 250# s Pulse Test
" Note : I
8
DS
GS
= -40V
= 0V
2.5
20
D
= -11.5 A
Rev. B, August 2002
3.0
10
24