FQP12P10 Fairchild Semiconductor, FQP12P10 Datasheet - Page 7

• Manufacturer Part Number: FQP12P10
• Description: MOSFET P-CH 100V 11.5A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP12P10

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 5.75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.29 Ohms
• Forward Transconductance Gfs (max / Min): 6.7 S
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Package Dimensions
[2.54
2.54TYP
1.27
0.20
0.10
]
ø3.60
10.00
9.90
(8.70)
0.20
0.10
0.20
[2.54
1.52
0.80
2.54TYP
0.10
0.20
0.10
TO-220
]
0.50
+0.10
–0.05
Dimensions in Millimeters
2.40
4.50
1.30
Rev. B, August 2002
+0.10
–0.05
0.20
0.20