FDZ206P Fairchild Semiconductor, FDZ206P Datasheet - Page 2

• Manufacturer Part Number: FDZ206P
• Description: MOSFET P-CH 20V 13A BGA
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ206P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 13A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4280pF @ 10V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: 16-BGA (30 pos)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0095 Ohms
• Forward Transconductance Gfs (max / Min): 58 S
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
I
On Characteristics
V
∆V
r
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
circuit board side of the solder ball, R
chip carrier. R
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
rr
DS(on)
FS
GS(th)
iss
oss
rss
SD
θJA
∆T
∆T
g
gs
gd
rr
GS(th)
DSS
is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the
DSS
J
J
θJC
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Forward Leakage
Gate–Body Reverse Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
and R
θJB
are guaranteed by design while R
Parameter
θJB
(Note 2)
, is defined for reference. For R
a)
(Note 2)
56°C/W when
mounted on a 1in
of 2 oz copper
θJA
is determined by the user' s board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
I
d
D
D
F
iF
T
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –13A,
= –250 µA, Referenced to 25°C
= –250 µA, Referenced to 25°C
2
/d
A
pad
= 25°C unless otherwise noted
= –16 V,
= V
= –5 V,
= –10 V,
= –10 V,
= 0 V,
= –12 V,
= 12 V,
= – 4.5 V,
= –2.5 V,
= –4.5 V, I
= –4.5 V,
= –10 V,
= –4.5 V,
= –4.5 V
= 0 V,
t
θJC
= 100 A/µs
, the thermal reference point for the case is defined as the top surface of the copper
Test Conditions
GS
,
I
S
D
= –1.8 A
= –13 A, T
I
V
V
V
I
I
I
V
I
V
I
R
I
D
D
D
D
D
D
D
GS
DS
DS
DS
GEN
GS
= –250 µA
= –250 µA
= –13 A
= –10.5 A
= –13 A
= –1 A,
= –13 A,
= 0 V
= 0 V
= 0 V
= –5 V
= 0 V,
= 6 Ω
(Note 2)
J
=125°C
Min Typ
–0.6
–20
–60
b)
119°C/W when mounted
on a minimum pad of 2 oz
copper
4280
–0.9
–0.7
–13
873
400
115
3.3
10
58
17
11
60
38
10
34
38
7
9
7
Max
–100
–1.5
14.5
–1.8
–1.2
100
184
9.5
–1
13
31
20
96
53
FDZ206P Rev. E (W)
Units
mV/°C
mV/°C
mΩ
nC
nC
nC
nC
µA
nA
nA
pF
pF
pF
nS
ns
ns
ns
ns
V
V
A
S
A
V