FDZ206P Fairchild Semiconductor, FDZ206P Datasheet - Page 5

• Manufacturer Part Number: FDZ206P
• Description: MOSFET P-CH 20V 13A BGA
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ206P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 13A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4280pF @ 10V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: 16-BGA (30 pos)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0095 Ohms
• Forward Transconductance Gfs (max / Min): 58 S
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.01
100
0.1
10
5
4
3
2
1
0
1
Figure 9. Maximum Safe Operating Area.
0.01
0
Figure 7. Gate Charge Characteristics.
r
0.001
I
DS(on)
SINGLE PULSE
R
D
0.01
θJA
= -13A
V
0.1
T
GS
1
A
0.001
= 119
LIMIT
= 25
= -4.5V
10
o
o
D = 0.5
C
C/W
0.1
-V
DS
0.2
, DRAIN-SOURCE VOLTAGE (V)
0.1
Q
0.05
g
0.02
, GATE CHARGE (nC)
20
0.01
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
0.01
1
SINGLE PULSE
DC
V
Figure 11. Transient Thermal Response Curve.
DS
10s
= -5V
30
1s
100ms
-15V
10ms
10
40
1ms
0.1
-10V
50
100
t
1
, TIME (sec)
1
50
40
30
20
10
5000
4500
4000
3500
3000
2500
2000
1500
1000
0
500
0.01
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
0.1
Power Dissipation.
-V
10
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
C
C
C
iss
oss
rss
1
t
1
, TIME (sec)
10
P(pk)
Duty Cycle, D = t
T
100
R
10
R
J
θJA
- T
θJA
(t) = r(t) + R
A
= 119 ° C/W
t
1
= P * R
t
2
SINGLE PULSE
R
15
θJA
T
100
A
FDZ206P Rev. E (W)
θJA
= 119° C/W
= 25°C
1
θJA
(t)
V
f = 1MHz
/ t
GS
2
= 0 V
1000
1000
20