FQP6N60 Fairchild Semiconductor, FQP6N60 Datasheet - Page 4

• Manufacturer Part Number: FQP6N60
• Description: MOSFET N-CH 600V 6.2A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP6N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
Figure 9. Maximum Safe Operating Area
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
, Junction Temperature [
10
0
, Drain-Source Voltage [V]
1 0
1 0
Operation in This Area
is Limited by R
1
1 0

Notes :
- 1
- 2
1. T
2. T
3. Single Pulse
1 0
0
C
J
- 5
= 25
= 150
D = 0 . 5
0 .0 5
0 .0 2
0 .0 1
0 .2
50
0 .1
o
DS(on)
C
o
C
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
10
1 0
(Continued)
o
2
C]
- 4
s in g le p u ls e
1 ms

Notes :
t
1. V
2. I
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
G S
= 250  A
100 s
150
= 0 V
1 0
- 3
10
200
3
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
7
6
5
4
3
2
1
0
25
Figure 8. On-Resistance Variation

N o te s :
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
P
-50

J C
J M
DM
50
- T
( t ) = 0 . 9 6  /W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
1
C
D M
0
t
, Case Temperature [
]
1 0
2
* Z
0
75
1

J C
/t
2
( t )
50
100
1 0
1
100
o
C]
125

Notes :
1. V
2. I
150
D
GS
= 3.1 A
= 10 V
Rev. A, April 2000
150
200