FQP6N60 Fairchild Semiconductor, FQP6N60 Datasheet - Page 7

• Manufacturer Part Number: FQP6N60
• Description: MOSFET N-CH 600V 6.2A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP6N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Package Dimensions
[2.54
2.54TYP
1.27
0.20
0.10
]
ø3.60
10.00
9.90
(8.70)
0.20
0.10
0.20
[2.54
1.52
0.80
2.54TYP
0.10
0.10
0.20
TO-220
]
0.50
+0.10
–0.05
2.40
4.50
1.30
+0.10
–0.05
Rev. A, April 2000
0.20
0.20