FQA33N10 Fairchild Semiconductor, FQA33N10 Datasheet - Page 2

• Manufacturer Part Number: FQA33N10
• Description: MOSFET N-CH 100V 36A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA33N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 52 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 163W
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Electrical Characteristics





Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.5mH, I
3. I
4. Pulse Test : Pulse width
300 s, Duty cycle
2%
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS

33A, di/dt
300A/ s, V
T
DSS
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 36A, V
DD
= 25V, R
DD
Parameter

BV
G
= 25
DSS,
Starting T
Starting T
J
J
= 25°C
T
= 25°C
C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 A, Referenced to 25°C
= 25
/ dt = 100 A/ s
= 10 V, I
= 100 V, V
= 80 V, T
= V
= 40 V, I
= 25 V, V
= 80 V, I
= 0 V, I
= 25 V, V
= -25 V, V
= 50 V, I
= 10 V
= 0 V, I
= 0 V, I
GS
Test Conditions
, I
D
D
S
S
D
D
D
D
= 18 A
= 36 A
= 33 A,
= 250 A
C
GS
DS
= 250 A
DS
= 18 A
= 33 A,
= 33 A,
GS
= 150°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Min
100
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.040
1150
0.11
0.22
Typ
320
195
110
7.5
23
62
15
80
38
18
80
--
--
--
--
--
--
--
--
--
0.052
1500
Max
-100
100
420
400
170
230
144
4.0
1.5
10
80
40
51
36
--
--
--
--
--
--
--
1
Rev. A, April 2000
Units
V/°C
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
C