FQA33N10 Fairchild Semiconductor, FQA33N10 Datasheet - Page 3

• Manufacturer Part Number: FQA33N10
• Description: MOSFET N-CH 100V 36A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA33N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 52 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 163W
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
3000
2500
2000
1500
1000
500
10
10
10
0.20
0.15
0.10
0.05
0.00
0
10
2
1
0
10
-1
-1
0
Top :
Bottom : 4.5 V
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
15.0 V
Drain Current and Gate Voltage
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
20
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
40
I
D
10
, Drain Current [A]
0
10
0
C
C
C

Notes :
oss
rss
iss
1. 250  s Pulse Test
2. T
60
C
V
= 25 
GS
V
GS
= 20V
= 10V
80
C
C
C
iss
oss
rss
= C
= C
= C
10

Note : T
gs
gd
ds
1
+ C
+ C

Notes :
10
gd
gd
100
1. V
2. f = 1 MHz
(C
1
ds
J
GS
= 25 
= shorted)
= 0 V
120
10
10
10
10
10
10
2
1
0
2
1
0
12
10
0.2
2
8
6
4
2
0
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
175

Figure 2. Transfer Characteristics
25

5
0.4
Variation vs. Source Current
175

4
10
Q
V
V
G
GS
SD
and Temperature
0.6
, Total Gate Charge [nC]
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
-55

15
25

0.8
20
6
V
DS
V
DS
= 80V
= 50V
25
1.0

Notes :

Notes :
1. V
2. 250  s Pulse Test
1. V
2. 250  s Pulse Test
30

Note : I
8
DS
GS
= 40V
= 0V
1.2
D
= 33A
35
Rev. A, April 2000
40
1.4
10