HUFA76429S3ST Fairchild Semiconductor, HUFA76429S3ST Datasheet

HUFA76429S3ST

Manufacturer Part Number

HUFA76429S3ST

Description

MOSFET N-CH 60V 47A D2PAK

Manufacturer

Fairchild Semiconductor

Series

UltraFET™r

Datasheet

1.HUFA76429D3.pdf (10 pages)

Specifications of HUFA76429S3ST

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

22 mOhm @ 47A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

47A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

46nC @ 10V

Input Capacitance (ciss) @ Vds

1480pF @ 25V

Power - Max

110W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.018 Ohms

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 16 V

Continuous Drain Current

44 A

Power Dissipation

110 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Fall Time

74 ns, 104 ns

Minimum Operating Temperature

- 55 C

Rise Time

203 ns, 100 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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20A, 60V, 0.027 Ohm, N-Channel, Logic

Level UltraFET® Power MOSFETs

Packaging

Symbol

Absolute Maximum Ratings

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

NOTES:

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

1. T

Continuous (T

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Derate Above 25

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

(FLANGE)

DRAIN

= 25

JEDEC TO-251AA

HUFA76429D3

C to 150

= 25

= 100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

SOURCE

C, V

DRAIN

C, V

GATE

= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html.

= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

SOURCE

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

GATE

Data Sheet

JEDEC TO-252AA

HUFA76429D3S

= 25

C, Unless Otherwise Speciﬁed

(FLANGE)

DRAIN

HUFA76429D3, HUFA76429D3S

Features

• Ultra Low On-Resistance

• Simulation Models

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs R

Ordering Information

NOTE: When ordering, use the entire part number. Add the sufﬁx T

to obtain the variant in tape and reel, e.g., HUFA76429D3ST.

HUFA76429D3

HUFA76429D3S

- r

- Temperature Compensated PSPICE® and SABER™

- Spice and SABER Thermal Impedance Models

- www.fairchild.com

PART NUMBER

Electriecal Models

DS(ON)

December 2001

, T

= 0.023 Ω,

= 0.027 Ω,

DGR

DSS

STG

pkg

HUFA76429D3, HUFA76429D3S

TO-251AA

TO-252AA

PACKAGE

Figures 6, 17, 18

Curves

= 10V

= 5V

-55 to 175

Figure 4

0.74

± 16

110

300

260

HUFA76429D3, HUFA76429D3S Rev. B

76429D

BRAND

UNITS

Related parts for HUFA76429S3ST

HUFA76429S3ST Summary of contents

Page 1

... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2001 Fairchild Semiconductor Corporation HUFA76429D3, HUFA76429D3S ...

Page 2

... CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance Source to Drain Diode Speciﬁcations PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ©2001 Fairchild Semiconductor Corporation o C, Unless Otherwise Speciﬁed SYMBOL TEST CONDITIONS = 250 µ (Figure 12) ...

Page 3

... SINGLE PULSE 0. FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 600 V = 10V GS 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION ©2001 Fairchild Semiconductor Corporation 150 175 25 125 o C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY ...

Page 4

... FIGURE 7. TRANSFER CHARACTERISTICS 20A 10A GATE TO SOURCE VOLTAGE (V) GS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT ©2001 Fairchild Semiconductor Corporation (Continued) 100 100µs 1ms 10ms 100 NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING - ...

Page 5

... FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 400 V = 4.5V 30V 20A 300 t r 200 t f 100 GATE TO SOURCE RESISTANCE (Ω) GS FIGURE 15. SWITCHING TIME vs GATE RESISTANCE ©2001 Fairchild Semiconductor Corporation (Continued 250µ 120 160 200 o C) FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN 0V 1MHz ISS GS GD ≅ ...

Page 6

... Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT g(REF) FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0.01Ω DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS ...

Page 7

... NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. ©2001 Fairchild Semiconductor Corporation rev 5 July 1999 DPLCAP ...

Page 8

... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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