HUFA76429S3ST Fairchild Semiconductor, HUFA76429S3ST Datasheet - Page 4

• Manufacturer Part Number: HUFA76429S3ST
• Description: MOSFET N-CH 60V 47A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA76429S3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 47A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 44 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 74 ns, 104 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 203 ns, 100 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
300
100
50
40
30
20
10
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
10
0
1
40
30
20
10
1.5
1
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
2
FIGURE 7. TRANSFER CHARACTERISTICS
SINGLE PULSE
T
T
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DD
J
C
I
D
= MAX RATED
= 25
= 15V
= 10A
VOLTAGE AND DRAIN CURRENT
o
C
V
2
V
DS
V
GS
GS
, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
, GATE TO SOURCE VOLTAGE (V)
4
, GATE TO SOURCE VOLTAGE (V)
I
D
= 20A
2.5
T
J
= 175
10
6
o
C
T
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
C
3
= 25
T
J
(Continued)
= 25
o
C
T
J
= -55
o
8
C
3.5
o
C
100µs
10ms
1ms
100
10
4
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
10
50
40
30
20
10
2.5
2.0
1.5
1.0
0.5
0
0.01
0
-80
FIGURE 8. SATURATION CHARACTERISTICS
V
STARTING T
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
GS
CAPABILITY
RESISTANCE vs JUNCTION TEMPERATURE
= 10V
-40
If R = 0
t
If R ≠ 0
t
AV
AV
V
DS
T
= (L)(I
= (L/R)ln[(I
J
J
t
1
, JUNCTION TEMPERATURE (
AV
, DRAIN TO SOURCE VOLTAGE (V)
= 150
0
, TIME IN AVALANCHE (ms)
0.1
AS
)/(1.3*RATED BV
o
C
AS
40
*R)/(1.3*RATED BV
STARTING T
V
V
GS
GS
HUFA76429D3, HUFA76429D3S Rev. B
2
= 5V
= 4V
T
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
C
= 25
V
DSS
V
V
GS
J
1
GS
GS
= 25
o
120
- V
= 3.5V
C
= 3V
= 10V, I
o
DD
DSS
o
3
C)
C
)
- V
D
160
DD
= 20A
) +1]
200
10
4