SFH9154 Fairchild Semiconductor, SFH9154 Datasheet

MOSFET P-CH 150V 18A TO-3P

SFH9154

Manufacturer Part Number
SFH9154
Description
MOSFET P-CH 150V 18A TO-3P
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of SFH9154

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
204W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
18 A
Power Dissipation
204 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Advanced Power MOSFET
Thermal Resistance
FEATURES
Absolute Maximum Ratings
T
Symbol
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
150
Lower Leakage Current : 10 A (Max.) @ V
Lower R
Symbol
J
R
dv/dt
R
R
V
V
E
E
I
I
P
, T
I
T
DM
AR
DSS
D
GS
AR
AS
CS
o
JC
JA
D
L
C Operating Temperature
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
: 0.140
Junction-to-Ambient
(Typ.)
Junction-to-Case
Characteristic
Characteristic
Case-to-Sink
C
=25
C
C
=25
=100
o
DS
C)
o
C)
o
= -150V
C)
0.24
Typ.
--
--
- 55 to +150
Value
-11.5
1215
-150
300
±30
20.4
1.63
-5.0
204
BV
R
I
-18
-72
-18
TO-3P
D
1
1.Gate 2. Drain 3. Source
2
DS(on)
3
= -18 A
DSS
SFH9154
Max.
0.61
40
--
= 0.2
= -150 V
Units
o
Units
W/
V/ns
C/W
mJ
mJ
o
W
V
A
A
V
A
C
o
C
1

Related parts for SFH9154

SFH9154 Summary of contents

Page 1

... Symbol Characteristic R Junction-to-Case JC R Case-to-Sink CS R Junction-to-Ambient DS(on TO-3P = -150V 1.Gate 2. Drain 3. Source Value -150 o = =100 C) -11.5 C ① -72 ±30 ② 1215 ① -18 ① 20.4 ③ -5.0 o =25 C) 204 C 1. +150 300 Typ. -- 0.24 -- SFH9154 = -150 V DSS = 0 Units V/ Max. Units 0. C ...

Page 2

... SFH9154 Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS ΔBV/ΔT Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss ...

Page 3

... Fig 3. On-Resistance vs. Drain Current Drain Current [A] D Fig 5. Capacitance vs. Drain-Source Voltage iss oss rss gd C iss oss rss Drain-Source Voltage [ Fig 2. Transfer Characteristics Fig 4. Source-Drain Diode Forward Voltage Fig 6. Gate Charge vs. Gate-Source Voltage SFH9154 Gate-Source Voltage [ Source-Drain Voltage [ Total Gate Charge [nC ...

Page 4

... SFH9154 Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area DS(on Drain-Source Voltage [ D=0.5 0 0.1 0.05 0.02 0.01 single pulse - Square Wave Pulse Duration 1 Fig 8. On-Resistance vs. Temperature Fig 10. Max. Drain Current vs. Case Temperature Fig 11. Thermal Response @ Notes : (t) = 0.61 C/W Max. ...

Page 5

... DUT -10V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Vary t to obtain required peak DUT -10V Same Type as DUT -10V DUT R 2 Current Sampling ( Resistor d(on 0.5 rated 10% 90% V out DSS SFH9154 Charge off d(off) BV DSS 1 ---- 2 -------------------- = DSS DD Time (t) D (t) 5 ...

Page 6

... SFH9154 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + Compliment of DUT (N-Channel) • dv/dt controlled by 밨 G • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- D = Gate Pulse Period Body Diode Reverse Current Body Diode Forward Current ...

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