SFH9154 Fairchild Semiconductor, SFH9154 Datasheet - Page 4

• Manufacturer Part Number: SFH9154
• Description: MOSFET P-CH 150V 18A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of SFH9154

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 204W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 204 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SFH9154
1 0
1 . 2
1 . 1
1 . 0
0 . 9
0 . 8
1 0
1 0
1 0
1 0
-1
3
2
1
0
- 7 5
1 0
0
Fig 7. Breakdown Voltage vs. Temperature
- 5 0
@ N o t e s :
1 . T
2 . T
3 . S i n g l e P u l s e
Fig 9. Max. Safe Operating Area
- 2 5
C
J
-V
T
= 2 5
= 1 5 0
J
DS
, Junction Temperature [
10
10
o
10
O p e r a t i o n i n T h i s A r e a
i s L i m i t e d b y R
, Drain-Source Voltage [V]
0
C
o
C
- 1
- 2
0
10
1 0
- 5
1
2 5
0.01
0.05
0.02
0.2
0.1
D=0.5
D C
5 0
DS(on)
1 0 m s
10
t
7 5
1
1 m s
- 4
, Square Wave Pulse Duration
single pulse
1 0 0
0 . 1 m s
@ N o t e s :
1 0
1 . V
2 . I
o
C]
2
1 2 5
GS
D
= 2 5 0 A
10
= 0 V
Fig 11. Thermal Response
- 3
1 5 0
1 7 5
@ Notes :
10
1. Z
2. Duty Factor, D = t
3. T
- 2
J M
J C
P
-T
DM
(t) = 0.61
2 . 0
1 . 6
1 . 2
0 . 8
C
2 0
1 5
1 0
Fig 10. Max. Drain Current vs. Case Temperature
5
0
- 7 5
2 5
= P
10
D M
t
- 1
1
- 5 0
*Z
Fig 8. On-Resistance vs. Temperature
t
2
o
J C
C/W Max.
- 2 5
(t)
5 0
1
[sec]
T
/t
J
T
, Junction Temperature [
2
c
10
0
, Case Temperature [
0
2 5
7 5
5 0
POWER MOSFET
10
P-CHANNEL
1
7 5
1 0 0
1 0 0
@ N o t e s :
o
C]
o
1 . V g s = - 1 0 V
2 . I d = - 9 A
C]
1 2 5
1 2 5
1 5 0
1 7 5
1 5 0
4