HUF75343G3 Fairchild Semiconductor, HUF75343G3 Datasheet - Page 5

• Manufacturer Part Number: HUF75343G3
• Description: MOSFET N-CH 55V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75343G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 205nC @ 20V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 270W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
1.2
1.1
1.0
0.9
2.5
2.0
1.5
1.0
0.5
-80
-80
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
I
D
GS
= 250 A
RESISTANCE vs JUNCTION TEMPERATURE
VOLTAGE vs JUNCTION TEMPERATURE
= 10V, I
-40
-40
T
T
J
D
J
, JUNCTION TEMPERATURE (
, JUNCTION TEMPERATURE (
= 75A
0
0
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
40
40
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
80
80
10
8
6
4
2
0
0
(Continued)
120
120
o
o
C)
C)
160
160
20
200
200
Q
V
g
DD
, GATE CHARGE (nC)
40
= 30V
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
60
WAVEFORMS IN
DESCENDING ORDER:
4000
3000
2000
1000
I
I
I
1.2
1.0
0.8
0.6
D
D
D
0
0
= 75A
= 47A
= 18A
-80
80
JUNCTION TEMPERATURE
HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1
-40
10
V
DS
T
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
100
0
20
C
C
C
ISS
OSS
RSS
40
30
80
V
GS
40
= V
V
C
C
C
GS
120
ISS
RSS
OSS
DS
= 0V, f = 1MHz
, I
o
= C
= C
C)
D
GS
= 250 A
C
50
GD
160
DS
+ C
+ C
GD
GD
200
60