HUF75343G3 Fairchild Semiconductor, HUF75343G3 Datasheet - Page 9

• Manufacturer Part Number: HUF75343G3
• Description: MOSFET N-CH 55V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75343G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 205nC @ 20V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 270W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPICE Thermal Model
REV 12 February 1999
HUF75343
CTHERM1 th 6 6.15e-3
CTHERM2 6 5 2.50e-2
CTHERM3 5 4 1.40e-2
CTHERM4 4 3 1.25e-2
CTHERM5 3 2 4.85e-2
CTHERM6 2 tl 12.55
RTHERM1 th 6 3.76e-3
RTHERM2 6 5 9.35e-3
RTHERM3 5 4 2.64e-2
RTHERM4 4 3 1.48e-1
RTHERM5 3 2 2.23e-1
RTHERM6 2 tl 2.96e-2
SABER Thermal Model
SABER thermal model HUF75343
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 6.15e-3
ctherm.ctherm2 6 5 = 2.50e-2
ctherm.ctherm3 5 4 = 1.40e-2
ctherm.ctherm4 4 3 = 1.25e-2
ctherm.ctherm5 3 2 = 4.85e-2
ctherm.ctherm6 2 tl = 12.55
rtherm.rtherm1 th 6 = 3.76e-3
rtherm.rtherm2 6 5 = 9.35e-3
rtherm.rtherm3 5 4 = 2.64e-2
rtherm.rtherm4 4 3 = 1.48e-1
rtherm.rtherm5 3 2 = 2.23e-1
rtherm.rtherm6 2 tl = 2.96e-2
}
©2003 Fairchild Semiconductor Corporation
RTHERM5
RTHERM2
RTHERM1
RTHERM3
RTHERM6
RTHERM4
HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1
th
5
4
3
2
tl
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM1
CTHERM3
CTHERM6
CTHERM4