FCH47N60F Fairchild Semiconductor, FCH47N60F Datasheet - Page 3

• Manufacturer Part Number: FCH47N60F
• Description: MOSFET N-CH 600V 47A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCH47N60F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 73 mOhm @ 23.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 8000pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCH47N60F Rev. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
0.25
0.20
0.15
0.10
0.05
0.00
10
10
10
25000
20000
15000
10000
5000
2
1
0
10
0
-1
0
10
Top :
Bottom : 5.5 V
-1
Drain Current and Gate Voltage
20
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
40
V
DS
60
V
, Drain-Source Voltage [V]
C
C
C
DS
10
oss
iss
rss
I
, Drain-Source Voltage [V]
D
0
, Drain Current [A]
10
80
0
100
120
V
GS
= 10V
140
* Notes :
C
C
C
10
iss
oss
rss
1. 250
2. T
= C
1
= C
= C
* Note : T
10
C
= 25
gs
gd
ds
μ
1
160
s Pulse Test
+ C
V
+ C
GS
o
C
gd
gd
* Notes :
= 20V
J
(C
1. V
2. f = 1 MHz
= 25
ds
180
= shorted)
GS
°
C
= 0 V
200
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
10
10
12
10
2
1
0
0.2
8
6
4
2
0
2
1
0
0
2
Variation vs. Source Current
and Temperatue
0.4
150
50
°
C
4
V
25
0.6
V
SD
Q
°
GS
C
150
G
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
°
25
C
100
°
0.8
C
V
DS
V
DS
= 400V
V
6
= 250V
DS
1.0
= 100V
-55
150
°
C
* Notes :
1.2
- Note
1. V
2. 250
1. V
2. 250
* Note : I
8
GS
DS
200
μ
= 0V
μ
= 40V
s Pulse Test
s Pulse Test
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D
1.4
= 47A
250
1.6
10