FCH47N60F Fairchild Semiconductor, FCH47N60F Datasheet - Page 4

• Manufacturer Part Number: FCH47N60F
• Description: MOSFET N-CH 600V 47A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCH47N60F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 73 mOhm @ 23.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 8000pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCH47N60F Rev. B
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Safe Operating Area
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
2
1
0
10
-100
0
vs. Temperature
Operation in This Area
is Limited by R
* Notes :
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
-50
°
C
°
C
DS(on)
T
V
J
DS
, Junction Temperature [
10
, Drain-Source Voltage [V]
0
1
1 0
1 0
-1
-2
1 0
-5
Figure 10. Transient Thermal Response Curve
50
D = 0 .5
0 .0 2
0 .0 1
0 .0 5
0 .2
0 .1
DC
100
10 ms
1 0
10
2
°
1 ms
-4
C]
s in g le p u ls e
* Notes :
t
100
1. V
2. I
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
D
GS
= 250
μ
150
= 0 V
s
μ
A
1 0
-3
(Continued)
200
10
3
4
1 0
Figure 8. On-Resistance Variation
-2
Figure 10. Maximum Drain Current
50
40
30
20
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
-100
* N o te s :
1 0
1 . Z
2 . D u ty F a c to r , D = t
3 . T
P
DM
-1
vs. Temperature
θ
J M
J C
( t) = 0 .3
- T
vs. Case Temperature
C
-50
= P
t
1
50
t
2
°
D M
C /W M a x .
1 0
* Z
T
0
1
T
/t
θ
J
J C
, Junction Temperature [
C
2
( t)
, Case Temperature [
0
75
1 0
50
1
100
100
°
C]
°
C]
125
* Notes :
www.fairchildsemi.com
1. V
2. I
150
D
GS
= 23.5 A
= 10 V
200
150