FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 157
FDR858P
Manufacturer Part Number
FDR858P
Description
MOSFET P-CH 30V 8A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR858P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 5V
Input Capacitance (ciss) @ Vds
2010pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Dc
9940
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR858P
FDR858PTR
FDR858PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR858P
Manufacturer:
2005+
Quantity:
3 000
Part Number:
FDR858P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR858P*
Manufacturer:
Winbond
Quantity:
439
- Current page: 157 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Transient Voltage Suppressors (Continued)
1V5KE150A
1V5KE150CA
1V5KE160A
1V5KE160CA
1V5KE170A
1V5KE170CA
1V5KE180A
1V5KE180CA
1V5KE200A
1V5KE200CA
1V5KE220A
1V5KE220CA
1V5KE250A
1V5KE250CA
1V5KE300A
1V5KE300CA
1V5KE350A
1V5KE350CA
1V5KE400A
1V5KE400CA
1V5KE440A
1V5KE440CA
SMB
SMBJ5V0A
SMBJ5V0CA
SMBJ6V0A
SMBJ6V0CA
SMBJ6V5A
SMBJ6V5CA
SMBJ7V0A
SMBJ7V0CA
SMBJ7V5A
SMBJ7V5CA
SMBJ8V0A
SMBJ8V0CA
Products
Voltage (V)
Stand-off
Reverse
V
128
128
136
136
145
145
154
154
171
171
185
185
214
214
256
256
300
300
342
342
376
376
RWM
6.5
6.5
7.5
7.5
5
5
6
6
7
7
8
8
V
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
Min
143
143
152
152
162
162
171
171
190
190
209
209
237
237
285
285
333
333
380
380
418
418
6.4
6.4
BR
Voltage (V)
Breakdown
Max
7.37
7.37
7.98
7.98
9.21
9.21
9.83
9.83
158
158
168
168
179
179
189
189
210
210
231
231
263
263
315
315
368
368
420
420
462
462
8.6
8.6
7
7
Condition
I
T
Test
(mA)
10
10
10
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Voltage @ I
Max Clamping
10.3
11.2
12.9
13.6
2-152
10.3
11.2
12.9
13.6
207
207
219
219
234
234
246
246
274
274
328
328
344
344
414
414
482
482
548
548
602
602
9.2
9.2
V
12
12
C
PPM
(V)
Discrete Power Products –
Surge Current (A)
Max Peak Pulse
I
65.2
65.2
58.3
58.3
53.6
53.6
46.5
46.5
44.1
44.1
PPM
7.2
7.2
6.8
6.8
6.4
6.4
6.1
6.1
5.5
5.5
4.6
4.6
4.5
4.5
3.8
3.8
3.2
3.2
2.8
2.8
2.6
2.6
50
50
Leakage @ V
I
R
Max Reverse
(µA)
1600
1600
1000
800
800
500
200
400
100
200
100
50
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
RWM
Diodes and Rectifiers
P
PPM
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
600
600
600
600
600
600
600
600
600
600
600
600
(W)
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Direction
Related parts for FDR858P
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: