FDR858P Fairchild Semiconductor, FDR858P Datasheet - Page 158
FDR858P
Manufacturer Part Number
FDR858P
Description
MOSFET P-CH 30V 8A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR858P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 5V
Input Capacitance (ciss) @ Vds
2010pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Dc
9940
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR858P
FDR858PTR
FDR858PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR858P
Manufacturer:
2005+
Quantity:
3 000
Part Number:
FDR858P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDR858P*
Manufacturer:
Winbond
Quantity:
439
- Current page: 158 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Transient Voltage Suppressors (Continued)
SMBJ8V5A
SMBJ8V5CA
SMBJ9V0A
SMBJ9V0CA
SMBJ10A
SMBJ10CA
SMBJ11A
SMBJ11CA
SMBJ12A822
SMBJ12A933
SMBJ12A
SMBJ12CA
SMBJ13A
SMBJ13A100
SMBJ13CA
SMBJ14A
SMBJ14CA
SMBJ15A
SMBJ15CA
SMBJ16A
SMBJ16CA
SMBJ17A
SMBJ17CA
SMBJ18A
SMBJ18CA
SMBJ20A
SMBJ20CA
SMBJ22A
SMBJ22CA
SMBJ24A
SMBJ24CA
SMBJ26A
SMBJ26CA
SMBJ28A
SMBJ28CA
Products
Voltage (V)
Stand-off
Reverse
V
RWM
8.5
8.5
10
10
11
11
12
12
12
12
13
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
9
9
V
Min
9.44
9.44
11.1
11.1
12.2
12.2
13.2
13.2
13.3
13.3
14.4
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
10
10
20
20
BR
Voltage (V)
Breakdown
Max
10.4
10.4
11.1
11.1
12.8
12.8
13.5
13.5
14.3
13.8
14.7
14.7
15.9
15.9
15.9
17.2
17.2
18.5
18.5
19.7
19.7
20.9
20.9
22.1
22.1
24.5
24.5
26.9
26.9
29.5
29.5
31.9
31.9
34.4
34.4
Condition
I
T
Test
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Voltage @ I
Max Clamping
2-153
14.4
14.4
15.4
15.4
18.2
18.2
15.6
15.6
19.9
19.9
21.5
21.5
21.5
23.2
23.2
24.4
24.4
27.6
27.6
29.2
29.2
32.4
32.4
35.5
35.5
38.9
38.9
42.1
42.1
45.4
45.4
V
17
26
17
26
C
PPM
(V)
Discrete Power Products –
Surge Current (A)
Max Peak Pulse
I
41.7
41.7
35.3
35.3
17.5
17.5
30.2
30.2
27.9
27.9
27.9
25.9
25.9
24.6
24.6
23.1
23.1
21.7
21.7
20.5
20.5
18.5
18.5
16.9
16.9
15.4
15.4
14.3
14.3
13.2
13.2
PPM
39
39
33
33
Bold = New Products (introduced January 2003 or later)
Leakage @ V
I
R
Max Reverse
(µA)
20
40
10
20
5
5
5
5
5
5
5
5
5
0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
RWM
Diodes and Rectifiers
P
PPM
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
(W)
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Direction
Related parts for FDR858P
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: