NDC632P Fairchild Semiconductor, NDC632P Datasheet - Page 4

• Manufacturer Part Number: NDC632P
• Description: MOSFET P-CH 20V 2.7A SSOT-6
• Manufacturer: Fairchild Semiconductor

Specifications of NDC632P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 550pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDC632P

Typical Electrical Characteristics
-15
-12
-15
-12
-9
-6
-3
-9
-6
-3
0
0
1.6
1.4
1.2
0.8
0.6
0
0
1
-50
V
DS
Figure 1. On-Region Characteristics.
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
=- 5V
V
V
I
-25
GS
D
GS
-1
= -2.7A
-1
= -4.5V
=-5V
V
V
DS
GS
, DRAIN-SOURCE VOLTAGE (V)
0
with Temperature
-4.5
T , JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
J
-4.0
-2
T = -55°C
J
-2
25
-3.5
-3.0
50
-3
-3
-2.7
25°C
75
-2.5
.
-4
100
125°C
-4
-2.0
125
-5
-5
150
1.8
1.6
1.4
1.2
0.8
1.2
1.1
0.9
0.8
0.7
0.6
1.5
0.5
2
1
1
-50
2
1
0
0
0
with Drain Current and Temperature
with Drain Current and Gate Voltage.
Figure 6. Gate Threshold Variation
Figure 4. On-Resistance Variation
Figure 2. On-Resistance Variation
V
GS
-25
=-4.5 V
V
GS
-3
-3
=-2.5V
with Temperature
0
T , JUNCTION TEMPERATURE (°C)
J
T = 125°C
J
I
D
I , DRAIN CURRENT (A)
D
2 5
, DRAIN CURRENT (A)
-6
-6
-2.7
25°C
5 0
-55°C
-3.0
-9
-9
7 5
.
-3.5
I
1 0 0
V
D
-4.0
DS
-12
= -250µA
-12
-4.5
= V
.
1 2 5
GS
-5.0
NDC632P Rev. B1
-15
1 5 0
-15