NDC632P Fairchild Semiconductor, NDC632P Datasheet - Page 5

• Manufacturer Part Number: NDC632P
• Description: MOSFET P-CH 20V 2.7A SSOT-6
• Manufacturer: Fairchild Semiconductor

Specifications of NDC632P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 550pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDC632P

Typical Electrical Characteristics
V
1 0 0 0
5 0 0
3 0 0
2 0 0
1 0 0
Figure 9. Capacitance Characteristics
GS
5 0
1.05
0.95
0.1
1.1
0.9
Figure 7. Breakdown Voltage Variation with
1
-50
Figure 11. Switching Test Circuit
I
f = 1 MHz
V
D
GS
0.2
R
= -250µA
-25
GEN
= 0 V
-V
DS
T
0
J
0.5
, DRAIN TO SOURCE VOLTAGE (V)
V
, JUNCTION TEMPERATURE (°C)
Temperature
IN
G
2 5
1
5 0
-V
D
S
DD
.
7 5
R
L
1 0 0
5
(continued)
D U T
.
.
C iss
1 2 5
C oss
1 0
C rss
V
1 5 2 0
O U T
1 5 0
Figure 8. Body Diode Forward Voltage Variation with
V
V
t
0.0001
Figure 10. Gate Charge Characteristics.
5
4
3
2
1
0
OUT
0.001
d(on)
0
0.01
IN
0.1
15
I
Figure 12. Switching Waveforms.
5
1
D
1 0 %
0
= -2.7A
V
GS
=0V
0.2
2
-V
t
T = 125°C
5 0 %
SD
o n
J
1 0 %
, BODY DIODE FORWARD VOLTAGE (V)
0.4
Source Current and Temperature.
Q
t
9 0 %
g
PULSE WIDTH
r
, GATE CHARGE (nC)
4
0.6
25°C
0.8
t
d(off)
V
DS
6
-55°C
= -5V
1
5 0 %
-10V
9 0 %
1.2
8
t
1 0 %
off
9 0 %
-15V
NDC632P Rev. B1
1.4
INVERTED
t
f
1 0