This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Reel Size 7’’ January 2004 mΩ –4.5 V DS(ON mΩ –2.5 V DS(ON mΩ –1.8 V DS(ON Bottom Drain Ratings Units –20 V ±8 V –8 A – 1.5 °C –55 to +150 °C/W 60 111 0.5 Tape width Quantity 8mm 3000 units FDC697P Rev C2 (W) ...
... Typ Max Units –20 V –12.2 mV/°C µA –1 ±100 nA –0.4 –0.8 –1.5 V 2.9 mV/° mΩ =125°C 37 3524 pF 544 pF 254 pF Ω 3 119 190 8.4 nC 5.6 7.8 nC –1.6 A –0.7 –1.2 V (Note 111°C/W when mounted on a minimum pad copper FDC697P Rev C2 (W) S ...
... C 0.0001 0 2 2.5 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -1.8V -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC697P Rev C2 ( 1.2 ...
... Figure 10. Single Pulse Maximum 0 TIME (sec 1MHz ISS C OSS 5.0 10.0 15 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 100°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 100 °C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDC697P Rev C2 (W) 20.0 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...