FDC697P Fairchild Semiconductor, FDC697P Datasheet

MOSFET P-CH 20V 8A 6-SSOP

FDC697P

Manufacturer Part Number
FDC697P
Description
MOSFET P-CH 20V 8A 6-SSOP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDC697P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 4.5V
Input Capacitance (ciss) @ Vds
3524pF @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
6-SSOT FLMP, SuperSOT-6 FLMP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Price
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Quantity:
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Part Number:
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Quantity:
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FDC697P
P-Channel 1.8V PowerTrench
General Description
This
Fairchild’s
process.
management applications.
Applications
2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DSS
GSS
D
J
θJA
θJC
, T
Battery management
Load Switch
Battery protection
Device Marking
STG
P-Channel
.697
It has been optimized for battery power
advanced
SuperSOT-6
S
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
S
1.8V
G
low voltage
TM
specified
FLMP
– Continuous
– Pulsed
FDC697P
Device
Parameter
S
MOSFET
Power
S
S
Trench
T
A
MOSFET
=25
uses
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Features
• –8 A, –20 V
• High performance trench technology for extremely
• Fast switching speed
• FLMP SuperSOT-6 package: Enhanced thermal
low R
performance in industry-standard package size
DS(ON)
1
2
3
Tape width
R
R
R
DS(ON)
DS(ON)
DS(ON)
–55 to +150
8mm
Ratings
Bottom
Drain
–20
–40
111
1.5
0.5
±8
–8
60
2
= 20 mΩ @ V
= 25 mΩ @ V
= 35 mΩ @ V
January 2004
6
5
4
GS
GS
GS
FDC697P Rev C2 (W)
3000 units
= –4.5 V
= –2.5 V
= –1.8 V
Quantity
Units
°C/W
°C
W
V
V
A

Related parts for FDC697P

FDC697P Summary of contents

Page 1

... Reel Size 7’’ January 2004 mΩ –4.5 V DS(ON mΩ –2.5 V DS(ON mΩ –1.8 V DS(ON Bottom Drain Ratings Units –20 V ±8 V –8 A – 1.5 °C –55 to +150 °C/W 60 111 0.5 Tape width Quantity 8mm 3000 units FDC697P Rev C2 (W) ...

Page 2

... Typ Max Units –20 V –12.2 mV/°C µA –1 ±100 nA –0.4 –0.8 –1.5 V 2.9 mV/° mΩ =125°C 37 3524 pF 544 pF 254 pF Ω 3 119 190 8.4 nC 5.6 7.8 nC –1.6 A –0.7 –1.2 V (Note 111°C/W when mounted on a minimum pad copper FDC697P Rev C2 (W) S ...

Page 3

... Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern FDC697P Rev C2 (W) ...

Page 4

... C 0.0001 0 2 2.5 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -1.8V -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC697P Rev C2 ( 1.2 ...

Page 5

... Figure 10. Single Pulse Maximum 0 TIME (sec 1MHz ISS C OSS 5.0 10.0 15 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 100°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 100 °C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDC697P Rev C2 (W) 20.0 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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