FDC697P Fairchild Semiconductor, FDC697P Datasheet - Page 2

• Manufacturer Part Number: FDC697P
• Description: MOSFET P-CH 20V 8A 6-SSOP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC697P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3524pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT FLMP, SuperSOT-6 FLMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes: 1.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
On Characteristics
V
∆V
R
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
surface of the drain pins. R
DSS
GSS
d(on)
r
d(off)
f
S
rr
FS
GS(th)
SD
∆T
∆T
DS(on)
iss
oss
rss
G
g
gs
gd
rr
GS(th)
DSS
DSS
J
J
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Charge
θJC
is guaranteed by design while R
Parameter
(Note 2)
a)
(Note 2)
60°C/W when
mounted on a 1in
of 2 oz copper
θCA
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
is determined by the user's board design.
T
D
D
F
2
iF
A
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
pad
= –8 A,
= – 250 µA, Referenced to 25°C
= – 250 µA, Referenced to 25°C
/d
= 25°C unless otherwise noted
= 0 V,
= –16 V,
= ±8 V,
= V
= –4.5 V,
= –2.5 V,
= –1.8 V,
= –4.5 V, I
= –5 V,
= – 10 V,
= 15 mV,
= –10 V,
= –4.5 V,
= –10 V,
= –4.5 V
= 0 V,
t
= 100 A/µs
Test Conditions
GS
,
I
S
D
= –1.6 A
= –8 A, T
V
V
I
I
I
R
I
I
I
V
I
I
D
D
D
D
D
D
f = 1.0 MHz
D
D
GS
DS
GEN
GS
= –250 µA
= –6.8 A
= –5.8 A
= –250 µA
= –8 A
= –8 A
= –1 A,
= –8 A,
= 0 V
= 0 V
= 0 V,
J
= 6 Ω
(Note 2)
=125°C
Min
–0.4
–20
b)
111°C/W when mounted
on a minimum pad of 2 oz
copper
–12.2
Typ Max Units
3524
–0.8
–0.7
544
254
119
2.9
3.8
5.6
13
18
26
16
37
18
43
39
27
16
6
6
±100
–1.5
–1.6
–1.2
190
8.4
7.8
–1
20
25
35
27
32
12
69
55
FDC697P Rev C2 (W)
mV/°C
mV/°C
mΩ
nC
µA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
Ω
V
V
A
V
S