FDPF55N06 Fairchild Semiconductor, FDPF55N06 Datasheet

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FDPF55N06

Manufacturer Part Number
FDPF55N06
Description
MOSFET N-CH 60V 55A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF55N06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
22 mOhm @ 27.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
55A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
37nC @ 10V
Input Capacitance (ciss) @ Vds
1510pF @ 25V
Power - Max
48W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FDPF55N06
Manufacturer:
FAIRCHILD
Quantity:
12 500
Price:
©2005 Fairchild Semiconductor Corporation
FDP55N06/FDPF55N06 Rev. A
FDP55N06/FDPF55N06
60V N-Channel MOSFET
Features
• 55A, 60V, R
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
θJC
θJS
θJA
, T
STG
DS(on)
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8∀ from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
D
S
= 0.022 Ω @V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
TO-220
FDP Series
GS
C
Parameter
= 25°C)
Parameter
= 10 V
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
TO-220F
FDPF Series
FDP55N06
FDP55N06
34.8
62.5
220
114
0.9
1.1
0.5
55
-55 to +150
± 25
11.4
480
300
4.5
60
55
G
FDPF55N06
FDPF55N06
34.8 *
220 *
55 *
2.58
62.5
0.4
48
--
UniFET
D
S
www.fairchildsemi.com
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FDPF55N06 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink Typ. θJS R Thermal Resistance, Junction-to-Ambient θJA ©2005 Fairchild Semiconductor Corporation FDP55N06/FDPF55N06 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... V = 50V ≤ 55A, di/dt ≤ 200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FDP55N06/FDPF55N06 Rev. A Package Reel Size TO-220 TO-220F T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µ ...

Page 3

... Drain Current and Gate Voltage 0.05 0.04 0. 10V GS 0. 100 I , Drain Current [A] D Figure 5. Capacitance Characteristics 2500 C 2000 oss C iss 1500 1000 C rss 500 Drain-Source Voltage [V] DS FDP55N06/FDPF55N06 Rev. A Figure 2. Transfer Characteristics Notes : 1. 250 µ s Pulse Test Figure 4. Body Diode Forward Voltage 20V Note : ...

Page 4

... Figure 9-1. Maximum Safe Operating Area for FDP55N06 Operation in This Area is Limited by R DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature FDP55N06/FDPF55N06 Rev. A (Continued) * Notes : 250 µ 100 150 200 o C] Figure 9-2. Maximum Safe Operating Area µ s 100 µ s ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FDP55N06 Figure 11-2. Transient Thermal Response Curve for FDPF55N06 FDP55N06/FDPF55N06 Rev. A (Continued) D=0.5 0.2 0.1 0.05 0.02 * Notes : 0. Duty Factor, D=t single pulse Square W ave Pulse Duration [sec =0.5 0.2 0.1 ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms FDP55N06/FDPF55N06 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP55N06/FDPF55N06 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

Page 8

... FDP55N06/FDPF55N06 Rev. A TO-220 ±0.20 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ] ±0.20 ±0.20 8 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP55N06/FDPF55N06 Rev. A TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 www.fairchildsemi.com ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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