IRFR224BTM_TC002 Fairchild Semiconductor, IRFR224BTM_TC002 Datasheet - Page 201

• Manufacturer Part Number: IRFR224BTM_TC002
• Description: MOSFET N-CH 250V 3.8A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of IRFR224BTM_TC002

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete
MOSFET: QFET
F Q P 18 N 50 __ V2
(Continued)
®
C: Advanced QFET C-series
Empty: Previous Version of QFET
V2: Advanced QFET V2-series
Empty: Standard Product
L: Logic Level Product
F: Fast Recovery MOSFET
N: N-Channel
P: P-Channel
A: TO-3P
B: D
D: D-PAK
E: TO-126
H: TO-247
N: TO-92
P: TO-220
S: 8-SOP
Q: QFET Technology
C: SuperFET Technology
Series
Optional
Voltage Rating (x 10)
Channel Polarity
Current Rating
Package
Base Technology
Fairchild
2
-PAK
AF: TO-3PF
I: I
U: I-PAK
G: 8DIP
L: TO-264
NL: TO-92L
PF: TO-220F
T: SOT-223
2
8-8
-PAK
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