SPD07N60S5 Infineon Technologies, SPD07N60S5 Datasheet - Page 5

• Manufacturer Part Number: SPD07N60S5
• Description: MOSFET N-CH 600V 7.3A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD07N60S5

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 5.5V @ 350µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 970pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.3 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: SP000313948; SPD07N60S5INTR

1 Power dissipation
P
3 Typ. output characteristic
I
parameter: t
Rev. 2.5
D
tot
= f ( V
= f ( T
100
W
A
80
70
60
50
40
30
20
10
25
15
10
0
5
0
0
0
SPU07N60S5
DS
C
20
); T
)
p
= 10 µs, V
5
j
40
=25°C
60
10
80
GS
15
100
120
20V
10V
12V
9V
8V
7V
V
°C
T
V
C
DS
160
25
Page 5
2 Safe operating area
I
parameter : D = 0 , T
4 Typ. output characteristic
I
parameter: t
D
D
= f ( V
= f ( V
10
10
10
10
10
A
A
12
-1
-2
8
6
4
2
0
2
1
0
10
0
DS
0
DS
); T
)
p
= 10 µs, V
5
j
=150°C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
1
10
C
=25°C
GS
20V
12V
10V
SPU07N60S5
SPD07N60S5
15
10
2008-04-10
2
V
V
8.5V
7.5V
6.5V
V
V
9V
8V
7V
6V
DS
DS
10
25
3