SPD07N60S5 Infineon Technologies, SPD07N60S5 Datasheet - Page 6

• Manufacturer Part Number: SPD07N60S5
• Description: MOSFET N-CH 600V 7.3A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD07N60S5

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 5.5V @ 350µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 970pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.3 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: SP000313948; SPD07N60S5INTR

5 Typ. drain-source on resistance
R
parameter: T
7 Typ. transfer characteristics
I
parameter: t
Rev. 2.5
D
DS(on)
= f ( V
mΩ
1.5
A
24
20
18
16
14
12
10
3
2
1
8
6
4
2
0
0
0
= f (I
GS
D
); V
2
)
p
j
25 °C
150 °C
=150°C, V
4
= 10 µs
DS
4
≥ 2 x I
8
6
GS
D
x R
8
12
DS(on)max
10
V
A
20V
12V
10V
9V
8.5V
8V
7.5V
7V
6.5V
6V
I
V
D
GS
14
20
Page 6
6 Drain-source on-state resistance
R
parameter : I
8 Typ. gate charge
V
parameter: I
GS
DS(on)
Ω
3.4
2.8
2.4
1.6
1.2
0.8
0.4
= f (Q
V
16
12
10
2
0
8
6
4
2
0
-60
0
SPU07N60S5
SPU07N60S5
= f (T
0.2 V
0.8 V
4
Gate
DS max
DS max
-20
D
D
j
)
8
= 7.3 A pulsed
= 4.6 A, V
)
12
20
98%
16
typ
60
20
GS
SPU07N60S5
SPD07N60S5
= 10 V
24
100
2008-04-10
28
°C
32 nC 38
T
Q
j
Gate
180