BSO201SP Infineon Technologies, BSO201SP Datasheet - Page 3

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BSO201SP

Manufacturer Part Number
BSO201SP
Description
MOSFET P-CH 20V 14.9A 8-SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO201SP

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 14.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
14.9A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
128nC @ 4.5V
Input Capacitance (ciss) @ Vds
5962pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
8 m Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
- 14.9 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Other names
BSO201SPINTR
SP000012578

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO201SP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSO201SP H
Manufacturer:
TI
Quantity:
22 500
Part Number:
BSO201SP H
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSO201SPH
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev.1.2
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
çV
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
GS
DD
DD
DD
GS
DD
A
GS
R
F
=-11.9A
=-1A, R
DS
=25°C
=-10V, |I
/dt=100A/µs
=0, V
=-10V, V
=-15V, I
=-15V, I
=0 to -4.5V
=-15V, I
=0, | IF | = |I D |
ç≥2*çI
Conditions
DS
G
D
=6Ω
F
D
D
D
ç*R
=-15V,
|
GS
=-14.9A
=-14.9A,
=-14.9A
=
DS(on)max
|l
=-4.5V,
D
|,
min.
32
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
108.5
5962
2168
-39.6
-85.5
21.3
39.7
typ.
781
127
-9.7
-1.6
-0.8
64
62
43
-
-
BSO201SP
2001-12-21
max.
-14.5 nC
-59.6
-128
163
190
-3.7
-1.2
-59
32
60
77
54
-
-
-
-
-
Unit
S
pF
ns
V
A
V
ns
nC

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