BSO201SP Infineon Technologies, BSO201SP Datasheet - Page 5

• Manufacturer Part Number: BSO201SP
• Description: MOSFET P-CH 20V 14.9A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO201SP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 14.9A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 128nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5962pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8 m Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: - 14.9 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: BSO201SPINTR; SP000012578

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
Rev.1.2
= f (V
A
A
90
70
60
50
40
30
20
10
35
25
20
15
10
0
5
0
0
0
DS
GS
1
); T
); |V
p
p
0.5
= 80 µs
2
= 80 µs
j
=25°C
Vgs = -3V
Vgs = -4V
Vgs = -4.5V
Vgs = -10V
DS
3
|≥ 2 x |I
4
1
5
D
| x R
1.5
6
Vgs = -2.5V
Vgs = -2.2V
Vgs = -1.8V
7
DS(on)max
V
8
- V
- V
V
DS
GS
2.5
10
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: t p = 80 µs
fs
DS(on)
0.035
0.025
0.015
0.005
= f(I
0.05
0.04
0.03
0.02
0.01
120
100
Ω
S
90
80
70
60
50
40
30
20
10
0
0
0
0
D
= f (I
); T
Vgs = - 2.2V
Vgs = - 2.5V
Vgs = - 3V
Vgs = - 4.5V
Vgs = - 10V
10
5
j
=25°C
D
GS
)
20
10
30
15
40
20
50
25
60
BSO201SP
2001-12-21
30
70
A
- I
A
- I
D
D
90
40