BSO301SP Infineon Technologies, BSO301SP Datasheet

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BSO301SP

Manufacturer Part Number
BSO301SP
Description
MOSFET P-CH 30V 12.6A DSO-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO301SP

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 14.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
136nC @ 10V
Input Capacitance (ciss) @ Vds
5890pF @ 25V
Power - Max
1.79W
Mounting Type
Surface Mount
Package / Case
DSO-8
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14.9 A
Power Dissipation
1790 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
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Other names
BSO301SPINTR

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Rev. 1.31
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Avalanche rated
• Qualified according JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
BSO301SP H
®
-P Power-Transistor
j
Package
PG-DSO-8
=25 °C, unless otherwise specified
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
Marking
301SP
T
T
T
I
T
JESD22-A114 HBM
D
page 1
A
A
A
A
=-14.9 A, R
=25 °C
=70 °C
=25 °C
=25 °C
1)
1)
2)
1)
Product Summary
V
R
I
GS
Leadfree
D
DS
DS(on),max
Yes
=25 Ω
≤10 secs
-14.9
-11.9
V
V
Halogen free
2.5
1C (1kV - 2kV)
GS
GS
-55 ... 150
55/150/56
= 10 V
= 4.5 V
Yes
Value
PG-DSO-8
248
260
±20
-60
steady state
-12.6
1.79
-10
BSO301SP H
12.0
-30
8.0
-14.9
packing
non dry
Unit
A
mJ
V
W
°C
°C
V
mΩ
A
A
2010-02-08

Related parts for BSO301SP

BSO301SP Summary of contents

Page 1

... =70 ° =25 °C D,pulse A =25 Ω =-14 =25 °C tot stg JESD22-A114 HBM page 1 BSO301SP H -30 V 8.0 mΩ 4 -14.9 A PG-DSO-8 Halogen free packing Yes non dry Value Unit ≤10 secs steady state -14.9 -12.6 A -11.9 -10 -60 248 mJ ±20 V 2.5 1 ...

Page 2

... GS(th) I =-250 µ =- DSS T =25 ° =- =125 ° =- GSS =-4 =-12 A DS(on =- =-14.9 A DS(on |>2 DS(on)max =-14 (one layer, 70 µm thick) copper area for drain page 2 BSO301SP H Values Unit min. typ. max K 110 - - 150 , - - - -1 -0.1 -1 µA - -10 -100 - -10 -100 nA - 8.8 12 mΩ - 6.3 8 2010-02-08 ...

Page 3

... A, R d(off g(th =-14 - plateau oss =25 ° S,pulse =-14 =25 ° = =-14.9A /dt =100 A/µ page 3 BSO301SP H Values min. typ. max. - 4430 5890 - 1180 1570 - 970 1500 - 130 195 - 110 165 - -11 -15 - -7.1 -9.5 - -35 - -40 -59 - -102 -136 - -2 - -60 - -0.82 -1 -20 -25 Unit pF ns ...

Page 4

... Rev. 1.31 2 Drain current I =f 120 160 0 [° Max. transient thermal impedance Z =f(t thJS p parameter 100 10 µs 1 µs 100 µ 0 0.01 10 100 0.00001 [V] DS page 4 BSO301SP H |≥ ≤ 120 T [° single pulse 0.0001 0.001 0.01 0 [s] p 160 2010-02-08 ...

Page 5

... GS 60 -10 V -3 Typ. transfer characteristics I =f |>2 DS(on)max parameter Rev. 1.31 6 Typ. drain-source on resistance R =f(I DS(on) parameter -3 -2 -2 Typ. forward transconductance g =f °25 C °150 [V] GS page 5 BSO301SP =25 ° 3.0 2.5 2.7 3.2 3.5 4 [A] D =25 ° [ 2010-02-08 ...

Page 6

... GS(th) 2.5 2 1.5 typ 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter: T 100 [V] DS page 6 BSO301SP H =-250 µ max. typ. min. - 100 140 T [° °C, typ 150 °C, typ 25 °C, 98% 150 °C, 98% 0 [V] SD 180 1.5 2010-02-08 ...

Page 7

... Drain-source breakdown voltage =-250 µ BR(DSS -60 - Rev. 1.31 14 Typ. gate charge V =f(Q GS parameter ° °100 4 C °125 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 BSO301SP =-14.9 A pulsed gate 100 -Q [nC] gate 120 Q g ate 2010-02-08 ...

Page 8

... Package Outline P-DSO-8: Outline Rev. 1.31 page 8 BSO301SP H 2010-02-08 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.31 page 9 BSO301SP H 2010-02-08 ...

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