IPP80N06S3L-06 Infineon Technologies, IPP80N06S3L-06 Datasheet - Page 6

• Manufacturer Part Number: IPP80N06S3L-06
• Description: MOSFET N-CH 55V 80A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80N06S3L-06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 56A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.2V @ 80µA
• Gate Charge (qg) @ Vgs: 196nC @ 10V
• Input Capacitance (ciss) @ Vds: 9417pF @ 25V
• Power - Max: 136W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP80N06S3L06X; IPP80N06S3L06XK; SP000088006

Rev. 1.1
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
2.5
1.5
0.5
= f(T
3
2
1
0
3
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
= V
0.4
20
DS
80µA
175 °C
0.6
V
T
SD
j
60
[°C]
[V]
0.8
25 °C
800µA
100
1
140
1.2
180
1.4
page 6
10 Typ. capacitances
C = f(V
12 Typ. avalanche characteristics
I
parameter: T
AV
= f(t
100
10
10
10
10
1
5
4
3
AV
DS
0.1
0
)
); V
Crss
Coss
Ciss
j(start)
IPI80N06S3L-06, IPP80N06S3L-06
GS
5
= 0 V; f = 1 MHz
1
10
t
V
150°C
AV
DS
15
10
[µs]
[V]
IPB80N06S3L-06
100°C
20
100
25°C
25
2007-11-07
1000
30