IPP80N06S3L-06 Infineon Technologies, IPP80N06S3L-06 Datasheet - Page 7

• Manufacturer Part Number: IPP80N06S3L-06
• Description: MOSFET N-CH 55V 80A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80N06S3L-06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 56A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.2V @ 80µA
• Gate Charge (qg) @ Vgs: 196nC @ 10V
• Input Capacitance (ciss) @ Vds: 9417pF @ 25V
• Power - Max: 136W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP80N06S3L06X; IPP80N06S3L06XK; SP000088006

Rev. 1.1
13 Typical avalanche Energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
12
10
1000
8
6
4
2
0
900
800
700
600
500
400
300
200
100
0
j
0
)
gate
0
80 A
20 A
D
); I
40 A
DD
D
= 80 A pulsed
50
50
Q
gate
T
100
100
j
[°C]
[nC]
11 V
150
150
44 V
200
200
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
V
66
64
62
60
58
56
54
52
50
48
46
G
-60
= f(T
Q
j
g
IPI80N06S3L-06, IPP80N06S3L-06
); I
-20
D
= 1 mA
Q
20
g
T
Q
j
60
g
[°C]
IPB80N06S3L-06
100
Q
140
2007-11-07
180