SPD25N06S2-40 Infineon Technologies, SPD25N06S2-40 Datasheet - Page 6

• Manufacturer Part Number: SPD25N06S2-40
• Description: MOSFET N-CH 55V 29A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD25N06S2-40

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 26µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013572; SPD25N06S240T

9 Drain-source on-resistance
R
parameter: I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
mΩ
pF
10
10
10
10
90
70
60
50
40
30
20
10
0
-60
4
3
2
1
0
= f(T j )
DS
)
D
-20
5
GS
= 13 A, V
=0V, f=1 MHz
20
10
98 %
GS
60
15
typ.
= 10 V
100
20
C
C
C
iss
oss
rss
°C
V
T
V
j
DS
180
30
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
2.5
1.5
V
A
4
3
2
-60
3
2
1
0
0
= f (T j )
SD
SPD25N06S2-40
)
0.4
-20
GS
0.8
p
= V
= 80 µs
20
26 µA
DS
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
SPD25N06S2-40
60
1.6
130 µA
100
2
2003-05-09
2.4
°C
V
V
T
j
SD
180
3