SPD25N06S2-40 Infineon Technologies, SPD25N06S2-40 Datasheet - Page 7

• Manufacturer Part Number: SPD25N06S2-40
• Description: MOSFET N-CH 55V 29A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD25N06S2-40

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 26µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013572; SPD25N06S240T

15 Drain-source breakdown voltage
V
parameter: I
13 Typ. avalanche energy
E
par.: I D =25A, V
(BR)DSS
AS
mJ
= f (T
V
66
62
60
58
56
54
52
50
80
60
50
40
30
20
10
-60
0
25
SPD25N06S2-40
= f (T
j
)
45
-20
D
=10 mA
j
)
65
DD
20
= 25 V, R
85
60
105
100
GS
125
= 25 Ω
145
140
°C
°C
T
T
j
j
200
185
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPD25N06S2-40
2
Gate
D
= 29 A pulsed
4
)
6
0,2
8
SPD25N06S2-40
V
10
DS max
12
2003-05-09
14
0,8 V
DS max
16
Q
nC
Gate
19