SPP80N08S2L-07 Infineon Technologies, SPP80N08S2L-07 Datasheet - Page 5

• Manufacturer Part Number: SPP80N08S2L-07
• Description: MOSFET N-CH 75V 80A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPP80N08S2L-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 67A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 233nC @ 10V
• Input Capacitance (ciss) @ Vds: 6820pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012476; SPP80N08S2L07

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPP80N08S2L-07
GS
P
0.5
tot
0.5
); T
); V
= 300W
p
p
i
= 80 µs
= 80 µs
1
j
=25°C
DS
1
h
g
1.5
≥ 2 x I
1.5
2
2
D
2.5
x R
2.5
3
DS(on)max
3
3.5
e
c
a
3.5
f
d
b
V GS [V]
4
a
b
c
d
e
f
g
h
i
V
V
DS
V
V
DS
10.0
2.8
3.0
3.3
3.5
3.8
4.0
4.3
4.5
4.5
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m Ω
= f(I
170
140
120
100
S
24
20
18
16
14
12
10
80
60
40
20
8
6
4
2
0
0
0
0
D
SPP80N08S2L-07
= f (I
V
); T
GS
3.3
c
20
[V] =
20
3.5
j
c
d
=25°C
D
fs
GS
)
40
3.8
e
40
4.0
f
60
60
d
g
4.3
80
SPB80N08S2L-07
SPP80N08S2L-07
4.5
h
80
100 120 140
10.0
i
100
e
2003-05-09
120
i
f
A
A
I
D
I
g
D
h
180
160